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Overheating effect and hole-phonon interaction in SiGe heterostructures
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Berkutov, I. B., Andrievskii, V. V., Komnik, Yu. F., Myronov, Maksym and Mironov, O. A. (2008) Overheating effect and hole-phonon interaction in SiGe heterostructures. Low Temperature Physics, Volume 34 (Number 11). pp. 943-946. doi:10.1063/1.3009592 ISSN 1063-777X.
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Official URL: http://dx.doi.org/10.1063/1.3009592
Abstract
The effect of charge-carrier overheating in a two-dimensional (2D) hole gas is realized in a Si1-xGex quantum well, where x=0.13, 0.36, 0.8, or 0.95. The Shubnikov-de Haas (SdH) oscillation amplitude is used as a "thermometer" to measure the temperature of overheated holes. The temperature dependence of the hole-phonon relaxation time is found from an analysis of the change of the dependence of the amplitude of the SdH oscillations on temperature and applied electrical field. Analysis of the temperature dependence of the hole-phonon relaxation time reveals a transition of the 2D system from the regime of "partial inelasticity" to conditions of small-angle scattering.
Item Type: | Journal Article | ||||
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Subjects: | Q Science > QC Physics Q Science > QD Chemistry |
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Library of Congress Subject Headings (LCSH): | Heterostructures, Quantum wells, Semiconductors -- Junctions, Silicon, Germanium, Excess carriers (Solid state physics) | ||||
Journal or Publication Title: | Low Temperature Physics | ||||
Publisher: | American Institute of Physics | ||||
ISSN: | 1063-777X | ||||
Official Date: | November 2008 | ||||
Dates: |
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Volume: | Volume 34 | ||||
Number: | Number 11 | ||||
Number of Pages: | 4 | ||||
Page Range: | pp. 943-946 | ||||
DOI: | 10.1063/1.3009592 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access |
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