Berkutov, I. B., Andrievskii, V. V., Komnik, Yu. F., Myronov, Maksym and Mironov, O. A. (2008) Overheating effect and hole-phonon interaction in SiGe heterostructures. Low Temperature Physics, Volume 34 (Number 11). pp. 943-946. doi:10.1063/1.3009592

Research output not available from this repository, contact author.

Request Changes to record.

Abstract

The effect of charge-carrier overheating in a two-dimensional (2D) hole gas is realized in a Si1-xGex quantum well, where x=0.13, 0.36, 0.8, or 0.95. The Shubnikov-de Haas (SdH) oscillation amplitude is used as a "thermometer" to measure the temperature of overheated holes. The temperature dependence of the hole-phonon relaxation time is found from an analysis of the change of the dependence of the amplitude of the SdH oscillations on temperature and applied electrical field. Analysis of the temperature dependence of the hole-phonon relaxation time reveals a transition of the 2D system from the regime of "partial inelasticity" to conditions of small-angle scattering.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics Q Science > QD Chemistry
Divisions:	Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Heterostructures, Quantum wells, Semiconductors -- Junctions, Silicon, Germanium, Excess carriers (Solid state physics)
Journal or Publication Title:	Low Temperature Physics
Publisher:	American Institute of Physics
ISSN:	1063-777X
Official Date:	November 2008
Dates:	Date Event November 2008 Published
Volume:	Volume 34
Number:	Number 11
Number of Pages:	4
Page Range:	pp. 943-946
DOI:	10.1063/1.3009592
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access

Data sourced from Thomson Reuters' Web of Knowledge

Request changes or add full text files to a record

Repository staff actions (login required)

View Item