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Surface electronic properties of clean and S-terminated InSb(001) and (111)B
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King, P. D. C., Veal, T. D. (Tim D.), Lowe, M. J. and McConville, C. F. (Chris F.). (2008) Surface electronic properties of clean and S-terminated InSb(001) and (111)B. Journal of Applied Physics, Vol.104 (No.8). Article No. 083709 . ISSN 0021-8979
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Official URL: http://dx.doi.org/10.1063/1.3000567
Abstract
The electronic properties of clean and sulfur-terminated surfaces of InSb(001) and (111) B are investigated using x-ray photoemission spectroscopy and high-resolution electron energy loss spectroscopy. The clean surfaces exhibit upward band bending (electron depletion) consistent with the charge neutrality level in InSb lying at the valence band maximum. The surface Fermi level to valence band maximum separation is increased for the S terminated compared with the clean surface, leading to flat bands and downward band bending (electron accumulation) for the (001) and (111) B surfaces, respectively. This is discussed in terms of compensation of native acceptor surface states. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3000567]
| Item Type: | Journal Article |
|---|---|
| Subjects: | Q Science > QC Physics |
| Divisions: | Faculty of Science > Physics |
| Journal or Publication Title: | Journal of Applied Physics |
| Publisher: | American Institute of Physics |
| ISSN: | 0021-8979 |
| Date: | 15 October 2008 |
| Volume: | Vol.104 |
| Number: | No.8 |
| Number of Pages: | 8 |
| Page Range: | Article No. 083709 |
| Identification Number: | 10.1063/1.3000567 |
| Status: | Peer Reviewed |
| Publication Status: | Published |
| Access rights to Published version: | Restricted or Subscription Access |
| URI: | http://wrap.warwick.ac.uk/id/eprint/29015 |
Data sourced from Thomson Reuters' Web of Knowledge
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