Skip to content Skip to navigation
University of Warwick
  • Study
  • |
  • Research
  • |
  • Business
  • |
  • Alumni
  • |
  • News
  • |
  • About

University of Warwick
Publications service & WRAP

Highlight your research

  • WRAP
    • Home
    • Search WRAP
    • Browse by Warwick Author
    • Browse WRAP by Year
    • Browse WRAP by Subject
    • Browse WRAP by Department
    • Browse WRAP by Funder
    • Browse Theses by Department
  • Publications Service
    • Home
    • Search Publications Service
    • Browse by Warwick Author
    • Browse Publications service by Year
    • Browse Publications service by Subject
    • Browse Publications service by Department
    • Browse Publications service by Funder
  • Help & Advice
University of Warwick

The Library

  • Login
  • Admin

Nanostructure formation in InAs/InP(001) heteroepitaxy: Importance of surface reconstruction

Tools
- Tools
+ Tools

Krzyzewski, T. J. and Jones, T. S. (Tim S.) (2008) Nanostructure formation in InAs/InP(001) heteroepitaxy: Importance of surface reconstruction. Physical Review B (Condensed Matter and Materials Physics), Vol.78 (No.15). Article No.155307. doi:10.1103/PhysRevB.78.155307

Research output not available from this repository, contact author.
Official URL: http://dx.doi.org/10.1103/PhysRevB.78.155307

Request Changes to record.

Abstract

Scanning tunneling microscopy has been used to study the deposition by molecular-beam epitaxy of thin InAs films on InP(001) substrates and compared with InAs growth on GaAs(001) under nominally identical conditions. In contrast to InAs/GaAs, InAs growth on InP does not proceed via a Stranski-Krastanov type mechanism, with a well-defined two-dimensional-three-dimensional growth mode transition, but instead a gradual and continuous surface roughening process occurs even from the earliest stages of deposition. Average height and surface roughness measurements indicate the absence of lateral surface correlations generated between adjacent elongated wires formed at higher deposition coverages. The origin of this growth behavior is attributed to the pregrowth formation of a self-templating arsenic-stabilized InP(001)-(2x4) surface, which is prepatterned on the atomic scale for the growth of highly anisotropic nanostructures.

Item Type: Journal Article
Subjects: Q Science > QC Physics
Divisions: Faculty of Science > Chemistry
Journal or Publication Title: Physical Review B (Condensed Matter and Materials Physics)
Publisher: American Physical Society
ISSN: 1098-0121
Official Date: October 2008
Dates:
DateEvent
October 2008Published
Volume: Vol.78
Number: No.15
Number of Pages: 8
Page Range: Article No.155307
DOI: 10.1103/PhysRevB.78.155307
Status: Peer Reviewed
Publication Status: Published
Funder: Engineering and Physical Sciences Research Council (EPSRC)

Data sourced from Thomson Reuters' Web of Knowledge

Request changes or add full text files to a record

Repository staff actions (login required)

View Item View Item
twitter

Email us: wrap@warwick.ac.uk
Contact Details
About Us