Krzyzewski, T. J. and Jones, T. S. (Tim S.) (2008) Nanostructure formation in InAs/InP(001) heteroepitaxy: Importance of surface reconstruction. Physical Review B (Condensed Matter and Materials Physics), Vol.78 (No.15). Article No.155307. doi:10.1103/PhysRevB.78.155307

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Abstract

Scanning tunneling microscopy has been used to study the deposition by molecular-beam epitaxy of thin InAs films on InP(001) substrates and compared with InAs growth on GaAs(001) under nominally identical conditions. In contrast to InAs/GaAs, InAs growth on InP does not proceed via a Stranski-Krastanov type mechanism, with a well-defined two-dimensional-three-dimensional growth mode transition, but instead a gradual and continuous surface roughening process occurs even from the earliest stages of deposition. Average height and surface roughness measurements indicate the absence of lateral surface correlations generated between adjacent elongated wires formed at higher deposition coverages. The origin of this growth behavior is attributed to the pregrowth formation of a self-templating arsenic-stabilized InP(001)-(2x4) surface, which is prepatterned on the atomic scale for the growth of highly anisotropic nanostructures.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics
Divisions:	Faculty of Science > Chemistry
Journal or Publication Title:	Physical Review B (Condensed Matter and Materials Physics)
Publisher:	American Physical Society
ISSN:	1098-0121
Official Date:	October 2008
Dates:	Date Event October 2008 Published
Volume:	Vol.78
Number:	No.15
Number of Pages:	8
Page Range:	Article No.155307
DOI:	10.1103/PhysRevB.78.155307
Status:	Peer Reviewed
Publication Status:	Published
Funder:	Engineering and Physical Sciences Research Council (EPSRC)

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