Silva, Francois, Achard, Jocelyn, Bonnin, X., Brinza, O., Michau, Armelle, Secroun, Aurelia, De Corte, Katrien, Felton, S. (Solveig), Newton, Mark E. and Gicquel, Alix (2008) Single crystal CVD diamond growth strategy by the use of a 3D geometrical model : Growth on (113) oriented substrates. In: 18th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide, Berlin, Germany, Sep 09-14, 2007. Published in: Diamond and Related Materials, Volume 17 (Numbers 7-10, Special issue SI). pp. 1067-1075.

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Abstract

The quality of single crystal diamond obtained by microwave CVD processes has been drastically improved in the last 5 years thanks to surface pretreatment of the substrates [A. Tallaire, J. Achard, F. Silva, R.S. Sussmann, A. Gicquel, E. Rzepka, Physica Status Solidi (A) 201, 2419-2424 (2004); G. Bogdan, M. Nesladek, J. D'Haen, J. Maes, V.V. Moshchalkov, K. Haenen, M. D'Olieslaeger, Physica Status Solidi (A) 202, 2066-2072 (2005); M. Yamamoto, T. Teraji, T. Ito, Journal of Crystal Growth 285, 130-136 (2005)]. Additionally, recent results have unambiguously shown the occurrence of (110) faces on crystal edges and (113) faces on crystal corners [F. Silva, J. Achard, X. Bonnin, A. Michau, A. Tallaire, O. Brinza, A. Gicquel, Physica Status Solidi (A) 203, 3049-3055 (2006)]. We have developed a 3D geometrical growth model to account for the final crystal morphology. The basic parameters of this growth model are the relative displacement speeds of (111), (110) and (113) faces normalized to that of the (100) faces, respectively alpha, beta, and gamma. This model predicts both the final equilibrium shape of the crystal (i.e. after infinite growth time) and the crystal morphology as a function of alpha, beta, gamma, and deposition time.

An optimized operating point, deduced from the model, has been validated experimentally by measuring the growth rate in (100), (111), (110), and (113) orientations. Furthermore, the evolution of alpha, beta, gamma as a function of methane concentration in the gas discharge has been established. From these results, crystal growth strategies can be proposed in order, for example, to enlarge the deposition area. In particular, we will show, using the growth model, that the only possibility to significantly increase the deposition area is, for our growth conditions, to use a (113) oriented substrate. A comparison between the grown crystal and the model results will be discussed and characterizations of the grown film (Photoluminescence spectroscopy, EPR, SEM) will be presented. (C) 2008 Elsevier B.V. All rights reserved.

Item Type:	Conference Item (UNSPECIFIED)
Subjects:	Q Science > QD Chemistry T Technology > TS Manufactures
Divisions:	Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Crystal growth -- Mathematical models, Crystallography, Chemical vapor deposition, Diamonds
Journal or Publication Title:	Diamond and Related Materials
Publisher:	Elsevier S.A.
ISSN:	0925-9635
Official Date:	July 2008
Volume:	Volume 17
Number:	Numbers 7-10, Special issue SI
Number of Pages:	9
Page Range:	pp. 1067-1075
Identification Number:	10.1016/j.diamond.2008.01.006
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access
Description:	Proceedings of Diamond 2007, the 18th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide
Funder:	European Commission (EC)
Grant number:	MRTN-CT-2004-512224 (EC)
Title of Event:	18th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide
Type of Event:	Conference
Location of Event:	Berlin, Germany
Date(s) of Event:	Sep 09-14, 2007
References:	[1] A. Tallaire, J. Achard, F. Silva, R.S. Sussmann, A. Gicquel, E. Rzepka, Physica Status Solidi (A) 201 (2004) 2419. [2] F. Silva, J. Achard, X. Bonnin, A. Michau, A. Tallaire, O. Brinza, A. Gicquel, Physica Status Solidi (A) 203 (2006) 3049. [3] J. Achard, F. Silva, O. Brinza, A. Tallaire, A. Gicquel, Diamond and Related Materials 16 (2007) 685. [4] A. Tallaire, J. Achard, F. Silva, R.S. Sussmann, A. Gicquel, Diamond and Related Materials 14 (2005) 249. [5] J. Achard, A. Tallaire, R. Sussmann, F. Silva, A. Gicquel, Journal of Crystal Growth 284 (2005) 396. [6] F. Silva, X. Bonnin, J. Achard, O. Brinza, A. Michau, A. Gicquel, J. Cryst. Growth 310 (2008) 187. [7] G. Janssen, J.J. Schermer, W.J.P. van Enckevort, L.J. Giling, Journal of Crystal Growth 125 (1992) 42. [8] T. Bauer, M. Schreck, H. Sternschulte, B. Stritzker, Diamond and Related Materials 14 (2005) 266. [9] A. Tallaire, A.T. Collins, D. Charles, J. Achard, R. Sussmann, A. Gicquel, M.E. Newton, A.M. Edmonds, R.J. Cruddace, Diamond and Related Materials 15 (2006) 1700. [10] A. Tallaire, J. Achard, A. Secroun, O. De Gryse, F. De Weerdt, J. Barjon, F. Silva, A. Gicquel, Journal of Crystal Growth 291 (2006) 533. [11] R.C. Burns, V. Cvetkovic, C.N. Dodge, D.J.F. Evans, M.-L.T. Rooney, P.M. Spear, C.M. Welbourn, Journal of Crystal Growth 104 (1990) 257. [12] P. Hartman, W.G. Perdok, Acta Crystallographica 8 (1955) 49. [13] L.J. Giling, W.J.P. Van Enckevort, Surface Science 161 (1985) 567. [14] J.G.E. Gardeniers, W.E.J.R. Maas, R.Z.C. Van Meerten, L.J. Giling, Journal of Crystal Growth 96 (1989) 821. [15] J.G.E. Gardeniers, W.E.J.R. Maas, R.Z.C. van Meerten, L.J. Giling, Journal of Crystal Growth 96 (1989) 832. [16] A.A. Stekolnikov, F. Bechstedt, Physical Review B (Condensed Matter and Materials Physics) 72 (2005) 125326. [17] W.J.P. van Enckevort, G. Janssen, W. Vollenberg, J.J. Schermer, L.J. Giling, M. Seal, Diamond and Related Materials 2 (1993) 997.
URI:	http://wrap.warwick.ac.uk/id/eprint/29307

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