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Single crystal CVD diamond growth strategy by the use of a 3D geometrical model : Growth on (113) oriented substrates

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Silva, Francois, Achard, Jocelyn, Bonnin, X., Brinza, O., Michau, Armelle, Secroun, Aurelia, De Corte, Katrien, Felton, S. (Solveig), Newton, Mark E. and Gicquel, Alix (2008) Single crystal CVD diamond growth strategy by the use of a 3D geometrical model : Growth on (113) oriented substrates. In: 18th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide, Berlin, Germany, Sep 09-14, 2007. Published in: Diamond and Related Materials, Volume 17 (Numbers 7-10, Special issue SI). pp. 1067-1075.

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Official URL: http://dx.doi.org/10.1016/j.diamond.2008.01.006

Abstract

The quality of single crystal diamond obtained by microwave CVD processes has been drastically improved in the last 5 years thanks to surface pretreatment of the substrates [A. Tallaire, J. Achard, F. Silva, R.S. Sussmann, A. Gicquel, E. Rzepka, Physica Status Solidi (A) 201, 2419-2424 (2004); G. Bogdan, M. Nesladek, J. D'Haen, J. Maes, V.V. Moshchalkov, K. Haenen, M. D'Olieslaeger, Physica Status Solidi (A) 202, 2066-2072 (2005); M. Yamamoto, T. Teraji, T. Ito, Journal of Crystal Growth 285, 130-136 (2005)]. Additionally, recent results have unambiguously shown the occurrence of (110) faces on crystal edges and (113) faces on crystal corners [F. Silva, J. Achard, X. Bonnin, A. Michau, A. Tallaire, O. Brinza, A. Gicquel, Physica Status Solidi (A) 203, 3049-3055 (2006)]. We have developed a 3D geometrical growth model to account for the final crystal morphology. The basic parameters of this growth model are the relative displacement speeds of (111), (110) and (113) faces normalized to that of the (100) faces, respectively alpha, beta, and gamma. This model predicts both the final equilibrium shape of the crystal (i.e. after infinite growth time) and the crystal morphology as a function of alpha, beta, gamma, and deposition time.

An optimized operating point, deduced from the model, has been validated experimentally by measuring the growth rate in (100), (111), (110), and (113) orientations. Furthermore, the evolution of alpha, beta, gamma as a function of methane concentration in the gas discharge has been established. From these results, crystal growth strategies can be proposed in order, for example, to enlarge the deposition area. In particular, we will show, using the growth model, that the only possibility to significantly increase the deposition area is, for our growth conditions, to use a (113) oriented substrate. A comparison between the grown crystal and the model results will be discussed and characterizations of the grown film (Photoluminescence spectroscopy, EPR, SEM) will be presented. (C) 2008 Elsevier B.V. All rights reserved.

Item Type:

Conference Item (UNSPECIFIED)

Subjects:

Q Science > QD Chemistry
T Technology > TS Manufactures

Divisions:

Faculty of Science > Physics

Library of Congress Subject Headings (LCSH):

Crystal growth -- Mathematical models, Crystallography, Chemical vapor deposition, Diamonds

Journal or Publication Title:

Diamond and Related Materials

Publisher:

Elsevier S.A.

ISSN:

0925-9635

Official Date:

July 2008

Dates:

Date	Event
July 2008	Published

Volume:

Volume 17

Number:

Numbers 7-10, Special issue SI

Number of Pages:

Page Range:

pp. 1067-1075

Identification Number:

10.1016/j.diamond.2008.01.006

Status:

Peer Reviewed

Publication Status:

Published

Access rights to Published version:

Restricted or Subscription Access

Description:

Proceedings of Diamond 2007, the 18th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide

Funder:

European Commission (EC)

Grant number:

MRTN-CT-2004-512224 (EC)

Title of Event:

18th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide

Type of Event:

Conference

Location of Event:

Berlin, Germany

Date(s) of Event:

Sep 09-14, 2007

References:

[1] A. Tallaire, J. Achard, F. Silva, R.S. Sussmann, A. Gicquel, E. Rzepka,
Physica Status Solidi (A) 201 (2004) 2419.
[2] F. Silva, J. Achard, X. Bonnin, A. Michau, A. Tallaire, O. Brinza, A.
Gicquel, Physica Status Solidi (A) 203 (2006) 3049.
[3] J. Achard, F. Silva, O. Brinza, A. Tallaire, A. Gicquel, Diamond and
Related Materials 16 (2007) 685.
[4] A. Tallaire, J. Achard, F. Silva, R.S. Sussmann, A. Gicquel, Diamond and
Related Materials 14 (2005) 249.
[5] J. Achard, A. Tallaire, R. Sussmann, F. Silva, A. Gicquel, Journal of
Crystal Growth 284 (2005) 396.
[6] F. Silva, X. Bonnin, J. Achard, O. Brinza, A. Michau, A. Gicquel, J. Cryst.
Growth 310 (2008) 187.
[7] G. Janssen, J.J. Schermer, W.J.P. van Enckevort, L.J. Giling, Journal of
Crystal Growth 125 (1992) 42.
[8] T. Bauer, M. Schreck, H. Sternschulte, B. Stritzker, Diamond and Related
Materials 14 (2005) 266.
[9] A. Tallaire, A.T. Collins, D. Charles, J. Achard, R. Sussmann, A. Gicquel,
M.E. Newton, A.M. Edmonds, R.J. Cruddace, Diamond and Related
Materials 15 (2006) 1700.
[10] A. Tallaire, J. Achard, A. Secroun, O. De Gryse, F. De Weerdt, J. Barjon, F.
Silva, A. Gicquel, Journal of Crystal Growth 291 (2006) 533.
[11] R.C. Burns, V. Cvetkovic, C.N. Dodge, D.J.F. Evans, M.-L.T. Rooney, P.M.
Spear, C.M. Welbourn, Journal of Crystal Growth 104 (1990) 257.
[12] P. Hartman, W.G. Perdok, Acta Crystallographica 8 (1955) 49.
[13] L.J. Giling, W.J.P. Van Enckevort, Surface Science 161 (1985) 567.
[14] J.G.E. Gardeniers, W.E.J.R. Maas, R.Z.C. Van Meerten, L.J. Giling,
Journal of Crystal Growth 96 (1989) 821.
[15] J.G.E. Gardeniers, W.E.J.R. Maas, R.Z.C. van Meerten, L.J. Giling,
Journal of Crystal Growth 96 (1989) 832.
[16] A.A. Stekolnikov, F. Bechstedt, Physical Review B (Condensed Matter
and Materials Physics) 72 (2005) 125326.
[17] W.J.P. van Enckevort, G. Janssen, W. Vollenberg, J.J. Schermer, L.J.
Giling, M. Seal, Diamond and Related Materials 2 (1993) 997.