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Surface electron accumulation and the charge neutrality level in In2O3

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King, P. D. C., Veal, T. D. (Tim D.), Payne, D. J., Bourlange, A., Egdell, R. G. and McConville, C. F. (Chris F.). (2008) Surface electron accumulation and the charge neutrality level in In2O3. Physical Review Letters, Vol.101 (No.11). Article no. 116808. ISSN 0031-9007

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Official URL: http://dx.doi.org/10.1103/PhysRevLett.101.116808

Abstract

High-resolution x-ray photoemission spectroscopy, infrared reflectivity and Hall effect measurements, combined with surface space-charge calculations, are used to show that electron accumulation occurs at the surface of undoped single-crystalline In2O3. From a combination of measurements performed on undoped and heavily Sn-doped samples, the charge neutrality level is shown to lie similar to 0.4 eV above the conduction band minimum in In2O3, explaining the electron accumulation at the surface of undoped material, the propensity for n-type conductivity, and the ease of n-type doping in In2O3, and hence its use as a transparent conducting oxide material.

Item Type:

Journal Article

Subjects:

Q Science > QC Physics

Divisions:

Faculty of Science > Physics

Library of Congress Subject Headings (LCSH):

Electrons, Surfaces (Physics), Transparent semiconductors, Metal oxide semiconductors, Oxides -- Electric properties, Electronic structure

Journal or Publication Title:

Physical Review Letters

Publisher:

American Physical Society

ISSN:

0031-9007

Official Date:

12 September 2008

Dates:

Date	Event
12 September 2008	Published

Volume:

Vol.101

Number:

No.11

Number of Pages:

Page Range:

Article no. 116808

Identification Number:

10.1103/PhysRevLett.101.116808

Status:

Peer Reviewed

Publication Status:

Published

Access rights to Published version:

Restricted or Subscription Access

Funder:

Engineering and Physical Sciences Research Council (EPSRC)

Grant number:

EP/C535553/1 (EPSRC), GR/S94148 (EPSRC), EP/E025722/1 (EPSRC)

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