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Surface electron accumulation and the charge neutrality level in In2O3

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King, P. D. C., Veal, T. D. (Tim D.), Payne, D. J., Bourlange, A., Egdell, R. G. and McConville, C. F. (Chris F.). (2008) Surface electron accumulation and the charge neutrality level in In2O3. Physical Review Letters, Vol.101 (No.11). Article no. 116808. ISSN 0031-9007

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Abstract

High-resolution x-ray photoemission spectroscopy, infrared reflectivity and Hall effect measurements, combined with surface space-charge calculations, are used to show that electron accumulation occurs at the surface of undoped single-crystalline In2O3. From a combination of measurements performed on undoped and heavily Sn-doped samples, the charge neutrality level is shown to lie similar to 0.4 eV above the conduction band minimum in In2O3, explaining the electron accumulation at the surface of undoped material, the propensity for n-type conductivity, and the ease of n-type doping in In2O3, and hence its use as a transparent conducting oxide material.

Item Type: Journal Article
Subjects: Q Science > QC Physics
Divisions: Faculty of Science > Physics
Library of Congress Subject Headings (LCSH): Electrons, Surfaces (Physics), Transparent semiconductors, Metal oxide semiconductors, Oxides -- Electric properties, Electronic structure
Journal or Publication Title: Physical Review Letters
Publisher: American Physical Society
ISSN: 0031-9007
Official Date: 12 September 2008
Volume: Vol.101
Number: No.11
Number of Pages: 4
Page Range: Article no. 116808
Identification Number: 10.1103/PhysRevLett.101.116808
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Funder: Engineering and Physical Sciences Research Council (EPSRC)
Grant number: EP/C535553/1 (EPSRC), GR/S94148 (EPSRC), EP/E025722/1 (EPSRC)
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URI: http://wrap.warwick.ac.uk/id/eprint/29357

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