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Si/SiC heterojunctions fabricated by direct wafer bonding
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Jennings, M. R., Pérez-Tomás, Amador, Guy, O. J., Hammond, Richard, Burrows, S. E., Gammon, P. M., Lodzinski, M., Covington, James A. and Mawby, P. A. (2008) Si/SiC heterojunctions fabricated by direct wafer bonding. Electrochemical and Solid State Letters, Vol.11 (No.11). H306-H308. doi:10.1149/1.2976158
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Official URL: http://dx.doi.org/10.1149/1.2976158
Abstract
The physical and electrical properties of Si/SiC heterojunctions formed by direct wafer bonding are presented. Atomic force microscopy (AFM) and imaging reveal an improved bonding quality when Si wafers are transferred to on-axis substrates as opposed to off-axis epitaxial layers. AFM analysis of the bonded wafer achieves a smoother surface when compared to molecular beam epitaxy-grown Si layers. A reduced roughness of only 5.8 nm was measured for bonded wafers. Current-voltage measurements were used to extract the rectifying characteristics of Si/SiC heterojunctions. These Si layers could lead to improved high quality and reliable SiO2 gate oxides. (C) 2008 The Electrochemical Society.
| Item Type: | Journal Article | ||||
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| Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology > TP Chemical technology |
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| Divisions: | Faculty of Science > Engineering Faculty of Science > Physics |
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| Library of Congress Subject Headings (LCSH): | Heterojunctions, Atomic force microscopy, Silicon carbide, Surface roughness, Wide gap semiconductors | ||||
| Journal or Publication Title: | Electrochemical and Solid State Letters | ||||
| Publisher: | Electrochemical Society, Inc. | ||||
| ISSN: | 1099-0062 | ||||
| Official Date: | September 2008 | ||||
| Dates: |
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| Volume: | Vol.11 | ||||
| Number: | No.11 | ||||
| Number of Pages: | 3 | ||||
| Page Range: | H306-H308 | ||||
| DOI: | 10.1149/1.2976158 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Access rights to Published version: | Restricted or Subscription Access | ||||
| Funder: | Great Britain. Dept. of Trade and Industry (DTI) | ||||
| Grant number: | TP/3/OPT/6/I/17311 (DTI) |
Data sourced from Thomson Reuters' Web of Knowledge
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