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Si/SiC heterojunctions fabricated by direct wafer bonding

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Jennings, M. R., Pérez-Tomás, Amador, Guy, O. J., Hammond, Richard, Burrows, S. E., Gammon, P. M., Lodzinski, M., Covington, James A. and Mawby, P. A. (2008) Si/SiC heterojunctions fabricated by direct wafer bonding. Electrochemical and Solid State Letters, Vol.11 (No.11). H306-H308. doi:10.1149/1.2976158

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Official URL: http://dx.doi.org/10.1149/1.2976158

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Abstract

The physical and electrical properties of Si/SiC heterojunctions formed by direct wafer bonding are presented. Atomic force microscopy (AFM) and imaging reveal an improved bonding quality when Si wafers are transferred to on-axis substrates as opposed to off-axis epitaxial layers. AFM analysis of the bonded wafer achieves a smoother surface when compared to molecular beam epitaxy-grown Si layers. A reduced roughness of only 5.8 nm was measured for bonded wafers. Current-voltage measurements were used to extract the rectifying characteristics of Si/SiC heterojunctions. These Si layers could lead to improved high quality and reliable SiO2 gate oxides. (C) 2008 The Electrochemical Society.

Item Type: Journal Article
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
T Technology > TP Chemical technology
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Faculty of Science, Engineering and Medicine > Science > Physics
Library of Congress Subject Headings (LCSH): Heterojunctions, Atomic force microscopy, Silicon carbide, Surface roughness, Wide gap semiconductors
Journal or Publication Title: Electrochemical and Solid State Letters
Publisher: Electrochemical Society, Inc.
ISSN: 1099-0062
Official Date: September 2008
Dates:
DateEvent
September 2008Published
Volume: Vol.11
Number: No.11
Number of Pages: 3
Page Range: H306-H308
DOI: 10.1149/1.2976158
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Funder: Great Britain. Dept. of Trade and Industry (DTI)
Grant number: TP/3/OPT/6/I/17311 (DTI)

Data sourced from Thomson Reuters' Web of Knowledge

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