Pérez-Tomás, Amador, Jennings, M. R., Mawby, P. A. (Philip A.), Millan, J., Godignon, P., Montserrat, Josep, Rossinyol, E., Vennegues, P. and Stoemenos, J.. (2008) Interfacial properties of thermally oxidized Ta2Si on Si. Surface and Interface Analysis, Volume 40 (Number 8). pp. 1164-1167. ISSN 0142-2421

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Abstract

Many refractory metal silicides have received great attention due to their potential for innovative developments in the silicon-based microelectronic industry. However, tantalum silicide, Ta2Si, has remained practically unnoticed since its successful application in silicon carbide technology as a simple route for a high-k dielectric formation. The thermal oxidation of Ta2Si produces high-k dielectric layers, (O-Ta2Si)-based on a combination of Ta2O5 and SiO2. In this work, we investigate the interfacial properties of thermally oxidized (850-1050 degrees C) Ta2Si on commercial silicon substrates. The implications of diffusion processes in the dielectric properties of an oxidized layer are analyzed. In particular, we observe migration of tantalum pentoxide nanocrystals into the substrate with increasing oxidation temperature. An estimation of the insulator charge and interfacial O-Ta2Si/Si trap density is also presented. Copyright (C) 2008 John Wiley & Sons, Ltd.

Item Type:	Journal Article
Subjects:	Q Science > QD Chemistry T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:	Faculty of Science > Engineering
Library of Congress Subject Headings (LCSH):	Tantalum compounds -- Oxidation, Silicides -- Oxidation, Silicon, Interfaces (Physical sciences)
Journal or Publication Title:	Surface and Interface Analysis
Publisher:	John Wiley & Sons Ltd.
ISSN:	0142-2421
Date:	August 2008
Volume:	Volume 40
Number:	Number 8
Number of Pages:	4
Page Range:	pp. 1164-1167
Identification Number:	10.1002/sia.2859
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access
Funder:	Great Britain. Department of Trade and Industry (DTI)
Grant number:	TP/3/CPT/6/I/17311 (DTI)
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URI:	http://wrap.warwick.ac.uk/id/eprint/29431

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