King, P. D. C., Veal, T. D. (Tim D.), Kendrick, C. E., Bailey, L. R. (Laura R.), Durbin, Steven M. and McConville, C. F. (Chris F.). (2008) InN/GaN valence band offset : high-resolution x-ray photoemission spectroscopy measurements. Physical Review B (Condensed Matter and Materials Physics), Volume 78 (Number 3). Article number 033308. ISSN 1098-0121

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Abstract

High-resolution x-ray photoemission spectroscopy measurements are used to determine the valence band offset of wurtzite-InN/GaN(0001) heterojunctions to be 0.58 +/- 0.08 eV. This is discussed within the context of previous measurements and calculations and is in agreement with the value of 0.52 +/- 0.14 eV determined from the alignment of the experimentally determined charge neutrality levels in InN and GaN. The heterojunction forms in the type-I straddling configuration with a conduction band offset of 2.22 +/- 0.10 eV.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics
Divisions:	Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Valence fluctuations, Gallium nitride, Indium, X-ray spectroscopy, High resolution spectroscopy, Emission spectroscopy, Photoemission
Journal or Publication Title:	Physical Review B (Condensed Matter and Materials Physics)
Publisher:	American Physical Society
ISSN:	1098-0121
Official Date:	July 2008
Volume:	Volume 78
Number:	Number 3
Number of Pages:	4
Article Number:	Article number 033308
Identification Number:	10.1103/PhysRevB.78.033308
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access
Funder:	Engineering and Physical Sciences Research Council (EPSRC)
Grant number:	EP/C535553/1, EP/E025722/1 (EPSRC)
URI:	http://wrap.warwick.ac.uk/id/eprint/29568

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