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InN/GaN valence band offset: High-resolution x-ray photoemission spectroscopy measurements
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King, P. D. C., Veal, T. D. (Tim D.), Kendrick, C. E., Bailey , L. R., Durbin, S. M. and McConville, C. F. (Chris F.). (2008) InN/GaN valence band offset: High-resolution x-ray photoemission spectroscopy measurements. Physical Review B (Condensed Matter and Materials Physics), Vol.78 (No.3). Article No.033308. ISSN 1098-0121
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Official URL: http://dx.doi.org/10.1103/PhysRevB.78.033308
Abstract
High-resolution x-ray photoemission spectroscopy measurements are used to determine the valence band offset of wurtzite-InN/GaN(0001) heterojunctions to be 0.58 +/- 0.08 eV. This is discussed within the context of previous measurements and calculations and is in agreement with the value of 0.52 +/- 0.14 eV determined from the alignment of the experimentally determined charge neutrality levels in InN and GaN. The heterojunction forms in the type-I straddling configuration with a conduction band offset of 2.22 +/- 0.10 eV.
| Item Type: | Journal Article |
|---|---|
| Subjects: | Q Science > QC Physics |
| Divisions: | Faculty of Science > Physics |
| Journal or Publication Title: | Physical Review B (Condensed Matter and Materials Physics) |
| Publisher: | American Physical Society |
| ISSN: | 1098-0121 |
| Date: | July 2008 |
| Volume: | Vol.78 |
| Number: | No.3 |
| Number of Pages: | 4 |
| Page Range: | Article No.033308 |
| Identification Number: | 10.1103/PhysRevB.78.033308 |
| Status: | Peer Reviewed |
| Publication Status: | Published |
| Access rights to Published version: | Restricted or Subscription Access |
| URI: | http://wrap.warwick.ac.uk/id/eprint/29568 |
Data sourced from Thomson Reuters' Web of Knowledge
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