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InN/GaN valence band offset : high-resolution x-ray photoemission spectroscopy measurements
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King, P. D. C., Veal, T. D. (Tim D.), Kendrick, C. E., Bailey, L. R. (Laura R.), Durbin, Steven M. and McConville, C. F. (Chris F.) (2008) InN/GaN valence band offset : high-resolution x-ray photoemission spectroscopy measurements. Physical Review B (Condensed Matter and Materials Physics), Volume 78 (Number 3). Article number 033308. doi:10.1103/PhysRevB.78.033308
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Official URL: http://dx.doi.org/10.1103/PhysRevB.78.033308
Abstract
High-resolution x-ray photoemission spectroscopy measurements are used to determine the valence band offset of wurtzite-InN/GaN(0001) heterojunctions to be 0.58 +/- 0.08 eV. This is discussed within the context of previous measurements and calculations and is in agreement with the value of 0.52 +/- 0.14 eV determined from the alignment of the experimentally determined charge neutrality levels in InN and GaN. The heterojunction forms in the type-I straddling configuration with a conduction band offset of 2.22 +/- 0.10 eV.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Subjects: | Q Science > QC Physics | ||||
| Divisions: | Faculty of Science > Physics | ||||
| Library of Congress Subject Headings (LCSH): | Valence fluctuations, Gallium nitride, Indium, X-ray spectroscopy, High resolution spectroscopy, Emission spectroscopy, Photoemission | ||||
| Journal or Publication Title: | Physical Review B (Condensed Matter and Materials Physics) | ||||
| Publisher: | American Physical Society | ||||
| ISSN: | 1098-0121 | ||||
| Official Date: | July 2008 | ||||
| Dates: |
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| Volume: | Volume 78 | ||||
| Number: | Number 3 | ||||
| Number of Pages: | 4 | ||||
| Article Number: | Article number 033308 | ||||
| DOI: | 10.1103/PhysRevB.78.033308 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Access rights to Published version: | Restricted or Subscription Access | ||||
| Funder: | Engineering and Physical Sciences Research Council (EPSRC) | ||||
| Grant number: | EP/C535553/1, EP/E025722/1 (EPSRC) |
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