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Electron paramagnetic resonance studies of silicon-related defects in diamond

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Edmonds, A. M., Newton, Mark E., Martineau, P. M., Twitchen, D. J. and Williams, S. D.. (2008) Electron paramagnetic resonance studies of silicon-related defects in diamond. Physical Review B (Condensed Matter and Materials Physics), Vol.77 (No.24). ISSN 1098-0121

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Official URL: http://dx.doi.org/10.1103/PhysRevB.77.245205

Abstract

We report the results of multifrequency electron paramagnetic resonance studies at temperatures between 8 and 300 K on diamonds synthesized by chemical vapor deposition and intentionally silicon doped with isotopes in natural abundance or isotopically enriched. The Si-29 hyperfine structure has provided definitive evidence for the involvement of silicon in two electron paramagnetic resonance centers in diamond that were previously suspected to involve silicon: KUL1 and KUL3. We present data that unambiguously identify KUL1 as an S=1 neutral silicon split-vacancy (D-3d symmetry) defect (V-Si-V)(0), while KUL3 is shown to be (V-Si-V)(0) decorated with a hydrogen atom, (V-Si-V:H)(0).

Item Type:

Journal Article

Subjects:

Q Science > QC Physics
T Technology > TS Manufactures

Divisions:

Faculty of Science > Physics

Library of Congress Subject Headings (LCSH):

Electron paramagnetic resonance, Diamonds -- Defects, Chemical vapor deposition, Silicon

Journal or Publication Title:

Physical Review B (Condensed Matter and Materials Physics)

Publisher:

American Physical Society

ISSN:

1098-0121

Official Date:

June 2008

Dates:

Date	Event
June 2008	Published

Volume:

Vol.77

Number:

No.24

Number of Pages:

Identification Number:

10.1103/PhysRevB.77.245205

Status:

Peer Reviewed

Publication Status:

Published

Access rights to Published version:

Restricted or Subscription Access

Funder:

Engineering and Physical Sciences Research Council (EPSRC)

Grant number:

GR/S96777/01 (EPSRC)

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