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Electron paramagnetic resonance studies of silicon-related defects in diamond

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Edmonds, A. M., Newton, Mark E., Martineau, P. M., Twitchen, D. J. and Williams, S. D.. (2008) Electron paramagnetic resonance studies of silicon-related defects in diamond. Physical Review B (Condensed Matter and Materials Physics), Vol.77 (No.24). ISSN 1098-0121

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Abstract

We report the results of multifrequency electron paramagnetic resonance studies at temperatures between 8 and 300 K on diamonds synthesized by chemical vapor deposition and intentionally silicon doped with isotopes in natural abundance or isotopically enriched. The Si-29 hyperfine structure has provided definitive evidence for the involvement of silicon in two electron paramagnetic resonance centers in diamond that were previously suspected to involve silicon: KUL1 and KUL3. We present data that unambiguously identify KUL1 as an S=1 neutral silicon split-vacancy (D-3d symmetry) defect (V-Si-V)(0), while KUL3 is shown to be (V-Si-V)(0) decorated with a hydrogen atom, (V-Si-V:H)(0).

Item Type: Journal Article
Subjects: Q Science > QC Physics
T Technology > TS Manufactures
Divisions: Faculty of Science > Physics
Library of Congress Subject Headings (LCSH): Electron paramagnetic resonance, Diamonds -- Defects, Chemical vapor deposition, Silicon
Journal or Publication Title: Physical Review B (Condensed Matter and Materials Physics)
Publisher: American Physical Society
ISSN: 1098-0121
Official Date: June 2008
Volume: Vol.77
Number: No.24
Number of Pages: 11
Identification Number: 10.1103/PhysRevB.77.245205
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Funder: Engineering and Physical Sciences Research Council (EPSRC)
Grant number: GR/S96777/01 (EPSRC)
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URI: http://wrap.warwick.ac.uk/id/eprint/29741

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