Electron paramagnetic resonance studies of silicon-related defects in diamond
Edmonds, A. M., Newton, Mark E., Martineau, P. M., Twitchen, D. J. and Williams, S. D.. (2008) Electron paramagnetic resonance studies of silicon-related defects in diamond. Physical Review B (Condensed Matter and Materials Physics), Vol.77 (No.24). ISSN 1098-0121Full text not available from this repository.
Official URL: http://dx.doi.org/10.1103/PhysRevB.77.245205
We report the results of multifrequency electron paramagnetic resonance studies at temperatures between 8 and 300 K on diamonds synthesized by chemical vapor deposition and intentionally silicon doped with isotopes in natural abundance or isotopically enriched. The Si-29 hyperfine structure has provided definitive evidence for the involvement of silicon in two electron paramagnetic resonance centers in diamond that were previously suspected to involve silicon: KUL1 and KUL3. We present data that unambiguously identify KUL1 as an S=1 neutral silicon split-vacancy (D-3d symmetry) defect (V-Si-V)(0), while KUL3 is shown to be (V-Si-V)(0) decorated with a hydrogen atom, (V-Si-V:H)(0).
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics
T Technology > TS Manufactures
|Divisions:||Faculty of Science > Physics|
|Library of Congress Subject Headings (LCSH):||Electron paramagnetic resonance, Diamonds -- Defects, Chemical vapor deposition, Silicon|
|Journal or Publication Title:||Physical Review B (Condensed Matter and Materials Physics)|
|Publisher:||American Physical Society|
|Official Date:||June 2008|
|Number of Pages:||11|
|Access rights to Published version:||Restricted or Subscription Access|
|Funder:||Engineering and Physical Sciences Research Council (EPSRC)|
|Grant number:||GR/S96777/01 (EPSRC)|
J. Isberg, J. Hammersberg, E. Johansson, T. Wikstrom, D. J.
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