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Multi-field simulations and characterization of CMOS-MEMS high-temperature smart gas sensors based on SOI technology

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Lu, Chih-Cheng, Liao, Kuan-Hsun, Udrea, Florin, Covington, James A. and Gardner, J. W. (2008) Multi-field simulations and characterization of CMOS-MEMS high-temperature smart gas sensors based on SOI technology. Journal of Micromechanics and Microengineering, Vol.18 (No.7). 075010. doi:10.1088/0960-1317/18/7/075010 ISSN 0960-1317.

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Official URL: http://dx.doi.org/10.1088/0960-1317/18/7/075010

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Abstract

This paper describes multiple field-coupled simulations and device characterization of fully CMOS-MEMS-compatible smart gas sensors. The sensor structure is designated for gas/vapour detection at high temperatures (> 300 degrees C) with low power consumption, high sensitivity and competent mechanic robustness employing the silicon-on-insulator (SOI) wafer technology, CMOS process and micromachining techniques. The smart gas sensor features micro-heaters using p-type MOSFETs or polysilicon resistors and differentially transducing circuits for in situ temperature measurement. Physical models and 3D electro-thermo-mechanical simulations of the SOI micro-hotplate induced by Joule, self-heating, mechanic stress and piezoresistive effects are provided. The electro-thermal effect initiates and thus affects electronic and mechanical characteristics of the sensor devices at high temperatures. Experiments on variation and characterization of micro-heater resistance, power consumption, thermal imaging, deformation interferometry and dynamic thermal response of the SOI micro-hotplate have been presented and discussed. The full integration of the smart gas sensor with automatically temperature-reading ICs demonstrates the lowest power consumption of 57 mW at 300 degrees C and fast thermal response of 10 ms.

Item Type: Journal Article
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Library of Congress Subject Headings (LCSH): Metal oxide semiconductors, Complementary, Silicon-on-insulator technology, Metal oxide semiconductor field-effect transistors, Nanoscience
Journal or Publication Title: Journal of Micromechanics and Microengineering
Publisher: IOP Publishing Ltd.
ISSN: 0960-1317
Official Date: July 2008
Dates:
DateEvent
July 2008Published
Volume: Vol.18
Number: No.7
Number of Pages: 11
Page Range: 075010
DOI: 10.1088/0960-1317/18/7/075010
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Funder: Engineering and Physical Sciences Research Council (EPSRC)
Grant number: GR2542 (EPSRC)

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