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Multi-field simulations and characterization of CMOS-MEMS high-temperature smart gas sensors based on SOI technology
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Lu, Chih-Cheng, Liao, Kuan-Hsun, Udrea, Florin, Covington, James A. and Gardner, J. W. (2008) Multi-field simulations and characterization of CMOS-MEMS high-temperature smart gas sensors based on SOI technology. Journal of Micromechanics and Microengineering, Vol.18 (No.7). 075010. doi:10.1088/0960-1317/18/7/075010 ISSN 0960-1317.
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Official URL: http://dx.doi.org/10.1088/0960-1317/18/7/075010
Abstract
This paper describes multiple field-coupled simulations and device characterization of fully CMOS-MEMS-compatible smart gas sensors. The sensor structure is designated for gas/vapour detection at high temperatures (> 300 degrees C) with low power consumption, high sensitivity and competent mechanic robustness employing the silicon-on-insulator (SOI) wafer technology, CMOS process and micromachining techniques. The smart gas sensor features micro-heaters using p-type MOSFETs or polysilicon resistors and differentially transducing circuits for in situ temperature measurement. Physical models and 3D electro-thermo-mechanical simulations of the SOI micro-hotplate induced by Joule, self-heating, mechanic stress and piezoresistive effects are provided. The electro-thermal effect initiates and thus affects electronic and mechanical characteristics of the sensor devices at high temperatures. Experiments on variation and characterization of micro-heater resistance, power consumption, thermal imaging, deformation interferometry and dynamic thermal response of the SOI micro-hotplate have been presented and discussed. The full integration of the smart gas sensor with automatically temperature-reading ICs demonstrates the lowest power consumption of 57 mW at 300 degrees C and fast thermal response of 10 ms.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||
| Library of Congress Subject Headings (LCSH): | Metal oxide semiconductors, Complementary, Silicon-on-insulator technology, Metal oxide semiconductor field-effect transistors, Nanoscience | ||||
| Journal or Publication Title: | Journal of Micromechanics and Microengineering | ||||
| Publisher: | IOP Publishing Ltd. | ||||
| ISSN: | 0960-1317 | ||||
| Official Date: | July 2008 | ||||
| Dates: |
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| Volume: | Vol.18 | ||||
| Number: | No.7 | ||||
| Number of Pages: | 11 | ||||
| Page Range: | 075010 | ||||
| DOI: | 10.1088/0960-1317/18/7/075010 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Access rights to Published version: | Restricted or Subscription Access | ||||
| Funder: | Engineering and Physical Sciences Research Council (EPSRC) | ||||
| Grant number: | GR2542 (EPSRC) |
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