The Library
Surface electronic properties of n- and p-type InGaN alloys
Tools
Tools
Tools
King, P. D. C., Veal, T. D., Lu, H., Jefferson, Paul Harvey, Hatfield, S. A., Schaff, William Joseph and McConville, C. F. (2008) Surface electronic properties of n- and p-type InGaN alloys. Physica Status Solidi. B: Basic Research, Vol.245 (No.5). pp. 881-883. doi:10.1002/pssb.200778452 ISSN 0370-1972.
Research output not available from this repository.
Request-a-Copy directly from author or use local Library Get it For Me service.
Official URL: http://dx.doi.org/10.1002/pssb.200778452
Abstract
X-ray photoemission spectroscopy is utilised to determine the variation in surface Fermi level pinning across the composition range of n- and p-type c-plane InxGa1-xN alloys. The pinning relative to the charge neutrality level is used to explain a change in band bending direction causing a transition from surface electron accumulation (In rich) to depletion (Ga-rich), at x approximate to 0.43 for n-type alloys and a transition from surface inversion to hole depletion at x approximate to 0.59 for p-type alloys where downward band bending occurs across the composition range. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Subjects: | Q Science > QC Physics | ||||
| Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
| Library of Congress Subject Headings (LCSH): | Alloys -- Electric properties, Surfaces (Technology) | ||||
| Journal or Publication Title: | Physica Status Solidi. B: Basic Research | ||||
| Publisher: | Wiley - V C H Verlag GmbH & Co. | ||||
| ISSN: | 0370-1972 | ||||
| Official Date: | May 2008 | ||||
| Dates: |
|
||||
| Volume: | Vol.245 | ||||
| Number: | No.5 | ||||
| Number of Pages: | 3 | ||||
| Page Range: | pp. 881-883 | ||||
| DOI: | 10.1002/pssb.200778452 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Access rights to Published version: | Restricted or Subscription Access | ||||
| Funder: | Engineering and Physical Sciences Research Council (EPSRC) | ||||
| Grant number: | EP/C535553/1 (EPSRC), GR/S14252/01 (EPSRC) | ||||
| Version or Related Resource: | Presented at 7th International Conference on Nitride Semiconductors (ICNS-7), Las Vegas, NV, Sep 16-21, 2007 | ||||
| Conference Paper Type: | Other | ||||
| Type of Event: | Conference |
Data sourced from Thomson Reuters' Web of Knowledge
Request changes or add full text files to a record
Repository staff actions (login required)
 |
View Item |
