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Surface electronic properties of n- and p-type InGaN alloys
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King, P. D. C., Veal, T. D., Lu, H., Jefferson, Paul Harvey, Hatfield, S. A., Schaff, William Joseph and McConville, C. F. (2008) Surface electronic properties of n- and p-type InGaN alloys. Physica Status Solidi. B: Basic Research, Vol.245 (No.5). pp. 881-883. doi:10.1002/pssb.200778452
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Official URL: http://dx.doi.org/10.1002/pssb.200778452
Abstract
X-ray photoemission spectroscopy is utilised to determine the variation in surface Fermi level pinning across the composition range of n- and p-type c-plane InxGa1-xN alloys. The pinning relative to the charge neutrality level is used to explain a change in band bending direction causing a transition from surface electron accumulation (In rich) to depletion (Ga-rich), at x approximate to 0.43 for n-type alloys and a transition from surface inversion to hole depletion at x approximate to 0.59 for p-type alloys where downward band bending occurs across the composition range. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Subjects: | Q Science > QC Physics | ||||
| Divisions: | Faculty of Science > Physics | ||||
| Library of Congress Subject Headings (LCSH): | Alloys -- Electric properties, Surfaces (Technology) | ||||
| Journal or Publication Title: | Physica Status Solidi. B: Basic Research | ||||
| Publisher: | Wiley - V C H Verlag GmbH & Co. | ||||
| ISSN: | 0370-1972 | ||||
| Official Date: | May 2008 | ||||
| Dates: |
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| Volume: | Vol.245 | ||||
| Number: | No.5 | ||||
| Number of Pages: | 3 | ||||
| Page Range: | pp. 881-883 | ||||
| DOI: | 10.1002/pssb.200778452 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Access rights to Published version: | Restricted or Subscription Access | ||||
| Funder: | Engineering and Physical Sciences Research Council (EPSRC) | ||||
| Grant number: | EP/C535553/1 (EPSRC), GR/S14252/01 (EPSRC) | ||||
| Version or Related Resource: | Presented at 7th International Conference on Nitride Semiconductors (ICNS-7), Las Vegas, NV, Sep 16-21, 2007 | ||||
| Conference Paper Type: | Other | ||||
| Type of Event: | Conference |
Data sourced from Thomson Reuters' Web of Knowledge
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