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Surface electronic properties of n- and p-type InGaN alloys

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King, P. D. C., Veal, T. D., Lu, H., Jefferson, Paul Harvey, Hatfield, S. A., Schaff, William Joseph and McConville, C. F.. (2008) Surface electronic properties of n- and p-type InGaN alloys. Physica Status Solidi. B: Basic Research, Vol.245 (No.5). pp. 881-883. ISSN 0370-1972

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Official URL: http://dx.doi.org/10.1002/pssb.200778452

Abstract

X-ray photoemission spectroscopy is utilised to determine the variation in surface Fermi level pinning across the composition range of n- and p-type c-plane InxGa1-xN alloys. The pinning relative to the charge neutrality level is used to explain a change in band bending direction causing a transition from surface electron accumulation (In rich) to depletion (Ga-rich), at x approximate to 0.43 for n-type alloys and a transition from surface inversion to hole depletion at x approximate to 0.59 for p-type alloys where downward band bending occurs across the composition range. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Item Type:

Journal Article

Subjects:

Q Science > QC Physics

Divisions:

Faculty of Science > Physics

Library of Congress Subject Headings (LCSH):

Alloys -- Electric properties, Surfaces (Technology)

Journal or Publication Title:

Physica Status Solidi. B: Basic Research

Publisher:

Wiley - V C H Verlag GmbH & Co.

ISSN:

0370-1972

Official Date:

May 2008

Dates:

Date	Event
May 2008	Published

Volume:

Vol.245

Number:

No.5

Number of Pages:

Page Range:

pp. 881-883

Identification Number:

10.1002/pssb.200778452

Status:

Peer Reviewed

Publication Status:

Published

Access rights to Published version:

Restricted or Subscription Access

Funder:

Engineering and Physical Sciences Research Council (EPSRC)

Grant number:

EP/C535553/1 (EPSRC), GR/S14252/01 (EPSRC)

Version or Related Resource:

Presented at 7th International Conference on Nitride Semiconductors (ICNS-7), Las Vegas, NV, Sep 16-21, 2007

Conference Paper Type:

Other

Type of Event:

Conference

References:

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