King, P. D. C., Veal, T. D. (Tim D.), Lu, H. (Hai), Jefferson, Paul Harvey, Hatfield, S. A., Schaff, William Joseph, 1956- and McConville, C. F. (Chris F.). (2008) Surface electronic properties of n- and p-type InGaN alloys. Physica Status Solidi. B: Basic Research, Vol.245 (No.5). pp. 881-883. ISSN 0370-1972

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Abstract

X-ray photoemission spectroscopy is utilised to determine the variation in surface Fermi level pinning across the composition range of n- and p-type c-plane InxGa1-xN alloys. The pinning relative to the charge neutrality level is used to explain a change in band bending direction causing a transition from surface electron accumulation (In rich) to depletion (Ga-rich), at x approximate to 0.43 for n-type alloys and a transition from surface inversion to hole depletion at x approximate to 0.59 for p-type alloys where downward band bending occurs across the composition range. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics
Divisions:	Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Alloys -- Electric properties, Surfaces (Technology)
Journal or Publication Title:	Physica Status Solidi. B: Basic Research
Publisher:	Wiley - V C H Verlag GmbH & Co.
ISSN:	0370-1972
Date:	May 2008
Volume:	Vol.245
Number:	No.5
Number of Pages:	3
Page Range:	pp. 881-883
Identification Number:	10.1002/pssb.200778452
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access
Funder:	Engineering and Physical Sciences Research Council (EPSRC)
Grant number:	EP/C535553/1 (EPSRC), GR/S14252/01 (EPSRC)
Version or Related Resource:	Presented at 7th International Conference on Nitride Semiconductors (ICNS-7), Las Vegas, NV, Sep 16-21, 2007
Conference Paper Type:	Other
Type of Event:	Conference
References:	[1] H. Lu, W. J. Schaff, L. F. Eastman, and C. E. Stutz, Appl. Phys. Lett. 82, 1736 (2003). [2] I. Mahboob et al., Phys. Rev. Lett. 92, 036804 (2004). [3] R. E. Jones et al., Phys. Rev. Lett. 96, 125505 (2006). [4] K. M. Tracy, W. J. Mecouch, R. F. Davis, and R. J. Nemanich, J. Appl. Phys. 94, 3163 (2003). [5] T. D. Veal et al., Appl. Phys. Lett. 89, 202110 (2006). [6] P. D. C. King et al., Phys. Rev. B 75, 115312 (2007). [7] H. Lu et al., Mater. Res. Soc. Symp. Proc. 743, 317 (2003). [8] W. J. Schaff et al., in: Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V, edited by H. M. Ng and A. G. Baca, The Electrochemical Society Proceedings Series, Vol. 2004-06 (Electrochemical Society, Pennington, NJ, 2004), pp. 358–371. [9] S. A. Chambers, T. Droubay, T. C. Kaspar, and M. Gutowski, J. Vac. Sci. Technol. B 22, 2205 (2004). [10] W. Mönch, Semiconductor surfaces and interfaces (Springer, Berlin, 2001). [11] I. Mahboob et al., Phys. Rev. B 69, 201307(R) (2004). [12] P. D. C. King et al., Phys. Rev. B 77, 045316 (2008). [13] C. G. Van de Walle and D. Segev, J. Appl. Phys. 101, 081704 (2007).
URI:	http://wrap.warwick.ac.uk/id/eprint/29938

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