Dobbie, A. (Andrew), De Jaeger, B., Meuris, Marc, Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2008) Channel backscattering characteristics of high performance germanium pMOSFETs. In: 9th International Conference on Ultimate Integration on Silicon, Univ Udine, Udine, Italy, Mar 13-14, 2008. Published in: Proceedings of the 9th International Conference on Ultimate Integration on Silicon pp. 7-10.

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Abstract

With its higher carrier mobilities and lower effective masses than silicon, germanium is a potential channel replacement material for future CMOS. Using data obtained from high performance Ge pMOSFETs with gate lengths down to 125 nm, we deduce values for the backscattering coefficient and ballisticity for temperatures in the range from 300 K to 4 K. We find there is considerable potential for future performance improvement for short channel lengths.

Item Type:	Conference Item (UNSPECIFIED)
Subjects:	Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:	Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Metal oxide semiconductor field-effect transistors, Germanium, Backscattering
Journal or Publication Title:	Proceedings of the 9th International Conference on Ultimate Integration on Silicon
Publisher:	IEEE
ISBN:	978-1-4244-1729-2
Editor:	Esseni, D and Palestri, P and Selmi, L
Official Date:	2008
Number of Pages:	4
Page Range:	pp. 7-10
Identification Number:	10.1109/ULIS.2008.4527129
Status:	Not Peer Reviewed
Publication Status:	Published
Title of Event:	9th International Conference on Ultimate Integration on Silicon
Type of Event:	Conference
Location of Event:	Univ Udine, Udine, Italy
Date(s) of Event:	Mar 13-14, 2008
URI:	http://wrap.warwick.ac.uk/id/eprint/29992

Data sourced from Thomson Reuters' Web of Knowledge

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