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The role of interface states in the low temperature mobility of hafnium-oxide gated Ge-pMOSFETs and the effect of a hydrogen anneal
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Beer, C. (Chris), Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), De Jaeger, B., Nicholas, G., Zimmerman, P. and Meuris, Marc (2008) The role of interface states in the low temperature mobility of hafnium-oxide gated Ge-pMOSFETs and the effect of a hydrogen anneal. In: 9th International Conference on Ultimate Integration on Silicon, Univ Udine, Udine, Italy, Mar 13-14, 2008. Published in: ULIS 2008: Proceedings of the 9th International Conference on Ultimate Integration on Silicon pp. 19-22. ISBN 978-1-4244-1729-2. doi:10.1109/ULIS.2008.4527132
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Abstract
The interface state density has been measured as a function of bandgap energy for high-k gated germanium nMOS capacitors, using the high-low capacitance and conductance techniques. Effective mobility has been measured at 4.2K on the corresponding pMOSFETs, which have a range of Ge/gate dielectric interface state densities, and modelled by assuming interface roughness and interface charge scattering at the SiO2 interlayer/Ge interface dominate the mobility. A good correlation between measured interface state density and modelled charged impurity density is observed for these devices. A hydrogen anneal reduces the interface state density, as measured for capacitors and MOSFETs, with a corresponding decrease in the impurity sheet density fitting parameter in the latter. In addition, the hydrogen anneal results in a 20% reduction in the deduced interface root mean square (RMS) roughness.
Item Type: | Conference Item (UNSPECIFIED) | ||||
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Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Library of Congress Subject Headings (LCSH): | Metal oxide semiconductor field-effect transistors, Germanium, Interfaces (Physical sciences), Low temperatures | ||||
Journal or Publication Title: | ULIS 2008: Proceedings of the 9th International Conference on Ultimate Integration on Silicon | ||||
Publisher: | IEEE | ||||
ISBN: | 978-1-4244-1729-2 | ||||
Editor: | Esseni, D and Palestri, P and Selmi, L | ||||
Official Date: | 2008 | ||||
Dates: |
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Number of Pages: | 4 | ||||
Page Range: | pp. 19-22 | ||||
DOI: | 10.1109/ULIS.2008.4527132 | ||||
Status: | Not Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access | ||||
Title of Event: | 9th International Conference on Ultimate Integration on Silicon | ||||
Type of Event: | Conference | ||||
Location of Event: | Univ Udine, Udine, Italy | ||||
Date(s) of Event: | Mar 13-14, 2008 |
Data sourced from Thomson Reuters' Web of Knowledge
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