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Relaxation of strained silicon on Si0.5Ge0.5 virtual substrates
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Parsons, J., Morris, R. J. H. (Richard J. H.), Leadley, D. R. (David R.) and Parker, Evan H. C. (2008) Relaxation of strained silicon on Si0.5Ge0.5 virtual substrates. In: 9th International Conference on Ultimate Integration on Silicon, Univ Udine, Udine, Italy, 13-14 Mar 2008. Published in: ULIS 2008 : Proceedings of the 9th International conference on ultimate integration on silicon pp. 211-214. ISBN 978-1-4244-1729-2. doi:10.1109/ULIS.2008.4527176
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Official URL: http://dx.doi.org/10.1109/ULIS.2008.4527176
Abstract
High resolution X-ray diffraction was used to measure the relaxation of strained silicon layers on 50% virtual substrates in the thickness range of 10 to 70 nm, many times the critical thickness of 4 nm. Relaxation was observed to reach only 2% at a thickness of 30 nm, this stability arising from dislocation pinning. Transmission electron microscope studies show relaxation occurs by the glide of pre-existing 60 degrees dislocations which become dissociated into stacking faults. At 7 nm, the nucleation of 90 degrees Shockley partial dislocations to form microtwins was observed, which increases relaxation to 14%. Annealing did not increase the relaxation of layers thinner than 30 nm, but in the 70 nm layer a significant increase in relaxation was observed due to the possible onset of the modified Frank-Read multiplication mechanism.
| Item Type: | Conference Item (Paper) | ||||
|---|---|---|---|---|---|
| Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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| Divisions: | Faculty of Science > Physics | ||||
| Library of Congress Subject Headings (LCSH): | Silicon, Germanium, Annealing of crystals, Transmission electron microscopy | ||||
| Journal or Publication Title: | ULIS 2008 : Proceedings of the 9th International conference on ultimate integration on silicon | ||||
| Publisher: | IEEE | ||||
| ISBN: | 978-1-4244-1729-2 | ||||
| Editor: | Esseni, D and Palestri, P and Selmi, L | ||||
| Official Date: | 2008 | ||||
| Dates: |
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| Number of Pages: | 4 | ||||
| Page Range: | pp. 211-214 | ||||
| DOI: | 10.1109/ULIS.2008.4527176 | ||||
| Status: | Not Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Conference Paper Type: | Paper | ||||
| Title of Event: | 9th International Conference on Ultimate Integration on Silicon | ||||
| Type of Event: | Conference | ||||
| Location of Event: | Univ Udine, Udine, Italy | ||||
| Date(s) of Event: | 13-14 Mar 2008 |
Data sourced from Thomson Reuters' Web of Knowledge
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