The Library
Relaxation of strained silicon on Si0.5Ge0.5 virtual substrates
Tools
Parsons, J., Morris, R. J. H. (Richard J. H.), Leadley, D. R. (David R.) and Parker, Evan H. C. (2008) Relaxation of strained silicon on Si0.5Ge0.5 virtual substrates. In: 9th International Conference on Ultimate Integration on Silicon, Univ Udine, Udine, Italy, 13-14 Mar 2008. Published in: ULIS 2008 : Proceedings of the 9th International conference on ultimate integration on silicon pp. 211-214. ISBN 978-1-4244-1729-2. doi:10.1109/ULIS.2008.4527176
Research output not available from this repository.
Request-a-Copy directly from author or use local Library Get it For Me service.
Official URL: http://dx.doi.org/10.1109/ULIS.2008.4527176
Abstract
High resolution X-ray diffraction was used to measure the relaxation of strained silicon layers on 50% virtual substrates in the thickness range of 10 to 70 nm, many times the critical thickness of 4 nm. Relaxation was observed to reach only 2% at a thickness of 30 nm, this stability arising from dislocation pinning. Transmission electron microscope studies show relaxation occurs by the glide of pre-existing 60 degrees dislocations which become dissociated into stacking faults. At 7 nm, the nucleation of 90 degrees Shockley partial dislocations to form microtwins was observed, which increases relaxation to 14%. Annealing did not increase the relaxation of layers thinner than 30 nm, but in the 70 nm layer a significant increase in relaxation was observed due to the possible onset of the modified Frank-Read multiplication mechanism.
Item Type: | Conference Item (Paper) | ||||
---|---|---|---|---|---|
Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
||||
Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Library of Congress Subject Headings (LCSH): | Silicon, Germanium, Annealing of crystals, Transmission electron microscopy | ||||
Journal or Publication Title: | ULIS 2008 : Proceedings of the 9th International conference on ultimate integration on silicon | ||||
Publisher: | IEEE | ||||
ISBN: | 978-1-4244-1729-2 | ||||
Editor: | Esseni, D and Palestri, P and Selmi, L | ||||
Official Date: | 2008 | ||||
Dates: |
|
||||
Number of Pages: | 4 | ||||
Page Range: | pp. 211-214 | ||||
DOI: | 10.1109/ULIS.2008.4527176 | ||||
Status: | Not Peer Reviewed | ||||
Publication Status: | Published | ||||
Conference Paper Type: | Paper | ||||
Title of Event: | 9th International Conference on Ultimate Integration on Silicon | ||||
Type of Event: | Conference | ||||
Location of Event: | Univ Udine, Udine, Italy | ||||
Date(s) of Event: | 13-14 Mar 2008 |
Data sourced from Thomson Reuters' Web of Knowledge
Request changes or add full text files to a record
Repository staff actions (login required)
View Item |