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Relaxation of strained silicon on Si0.5Ge0.5 virtual substrates

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Parsons, J., Morris, R. J. H. (Richard J. H.), Leadley, D. R. (David R.) and Parker, Evan H. C. (2008) Relaxation of strained silicon on Si0.5Ge0.5 virtual substrates. In: 9th International Conference on Ultimate Integration on Silicon, Univ Udine, Udine, Italy, 13-14 Mar 2008. Published in: ULIS 2008 : Proceedings of the 9th International conference on ultimate integration on silicon pp. 211-214. ISBN 978-1-4244-1729-2. doi:10.1109/ULIS.2008.4527176

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Official URL: http://dx.doi.org/10.1109/ULIS.2008.4527176

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Abstract

High resolution X-ray diffraction was used to measure the relaxation of strained silicon layers on 50% virtual substrates in the thickness range of 10 to 70 nm, many times the critical thickness of 4 nm. Relaxation was observed to reach only 2% at a thickness of 30 nm, this stability arising from dislocation pinning. Transmission electron microscope studies show relaxation occurs by the glide of pre-existing 60 degrees dislocations which become dissociated into stacking faults. At 7 nm, the nucleation of 90 degrees Shockley partial dislocations to form microtwins was observed, which increases relaxation to 14%. Annealing did not increase the relaxation of layers thinner than 30 nm, but in the 70 nm layer a significant increase in relaxation was observed due to the possible onset of the modified Frank-Read multiplication mechanism.

Item Type: Conference Item (Paper)
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science > Physics
Library of Congress Subject Headings (LCSH): Silicon, Germanium, Annealing of crystals, Transmission electron microscopy
Journal or Publication Title: ULIS 2008 : Proceedings of the 9th International conference on ultimate integration on silicon
Publisher: IEEE
ISBN: 978-1-4244-1729-2
Editor: Esseni, D and Palestri, P and Selmi, L
Official Date: 2008
Dates:
DateEvent
2008Published
Number of Pages: 4
Page Range: pp. 211-214
DOI: 10.1109/ULIS.2008.4527176
Status: Not Peer Reviewed
Publication Status: Published
Conference Paper Type: Paper
Title of Event: 9th International Conference on Ultimate Integration on Silicon
Type of Event: Conference
Location of Event: Univ Udine, Udine, Italy
Date(s) of Event: 13-14 Mar 2008

Data sourced from Thomson Reuters' Web of Knowledge

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