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On the electron mobility enhancement in biaxially strained Si MOSFETs
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Driussi, F., Esseni, D. (David), Selmi, L. (Luca), Hellström, P.-E., Malm, G., Hallstedt, J., Östling, Mikael, Grasby, T. J., Leadley, D. R. (David R.) and Mescot, X. (2008) On the electron mobility enhancement in biaxially strained Si MOSFETs. Solid-State Electronics, Vol.52 (No.4). pp. 498-505. doi:10.1016/j.sse.2007.10.033
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Official URL: http://dx.doi.org/10.1016/j.sse.2007.10.033
Abstract
This paper reports a detailed experimental and simulation study of the electron mobility enhancement induced by the biaxial strain in (001) silicon MOSFETs. To this purpose, ad hoc test structures have been fabricated on strained Si films grown on different SiGe virtual substrates and the effective mobility of the electrons has been extracted. To interpret the experimental results, we performed simulations using numerical solutions of Schroedinger-Poisson equations to calculate the charge and the momentum relaxation time approximation to calculate the mobility.
The mobility enhancement with respect to the unstrained Si device has been analyzed as a function of the Ge content of SiGe substrates and of the operation temperature. (c) 2007 Elsevier Ltd. All rights reserved.
| Item Type: | Journal Article | ||||
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| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
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| Divisions: | Faculty of Science > Physics | ||||
| Library of Congress Subject Headings (LCSH): | Metal oxide semiconductor field-effect transistors, Silicon, Electron mobility, Solid state electronics | ||||
| Journal or Publication Title: | Solid-State Electronics | ||||
| Publisher: | Elsevier | ||||
| ISSN: | 0038-1101 | ||||
| Official Date: | April 2008 | ||||
| Dates: |
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| Volume: | Vol.52 | ||||
| Number: | No.4 | ||||
| Number of Pages: | 8 | ||||
| Page Range: | pp. 498-505 | ||||
| DOI: | 10.1016/j.sse.2007.10.033 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Description: | Special Issue: Papers Selected from the Ultimate Integration on Silicon Conference 2007 - ULIS 2007Papers Selected from the International Conference on Memory Technology 2007 - ICMTD 2007 |
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