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On the electron mobility enhancement in biaxially strained Si MOSFETs

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Driussi, F., Esseni, D. (David), Selmi, L. (Luca), Hellström, P.-E., Malm, G., Hallstedt, J., Östling, Mikael, Grasby, T. J., Leadley, D. R. (David R.) and Mescot, X. (2008) On the electron mobility enhancement in biaxially strained Si MOSFETs. Solid-State Electronics, Vol.52 (No.4). pp. 498-505. doi:10.1016/j.sse.2007.10.033

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Official URL: http://dx.doi.org/10.1016/j.sse.2007.10.033

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Abstract

This paper reports a detailed experimental and simulation study of the electron mobility enhancement induced by the biaxial strain in (001) silicon MOSFETs. To this purpose, ad hoc test structures have been fabricated on strained Si films grown on different SiGe virtual substrates and the effective mobility of the electrons has been extracted. To interpret the experimental results, we performed simulations using numerical solutions of Schroedinger-Poisson equations to calculate the charge and the momentum relaxation time approximation to calculate the mobility.

The mobility enhancement with respect to the unstrained Si device has been analyzed as a function of the Ge content of SiGe substrates and of the operation temperature. (c) 2007 Elsevier Ltd. All rights reserved.

Item Type: Journal Article
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics
Divisions: Faculty of Science > Physics
Library of Congress Subject Headings (LCSH): Metal oxide semiconductor field-effect transistors, Silicon, Electron mobility, Solid state electronics
Journal or Publication Title: Solid-State Electronics
Publisher: Elsevier
ISSN: 0038-1101
Official Date: April 2008
Dates:
DateEvent
April 2008Published
Volume: Vol.52
Number: No.4
Number of Pages: 8
Page Range: pp. 498-505
DOI: 10.1016/j.sse.2007.10.033
Status: Peer Reviewed
Publication Status: Published
Description:

Special Issue: Papers Selected from the Ultimate Integration on Silicon Conference 2007 - ULIS 2007Papers Selected from the International Conference on Memory Technology 2007 - ICMTD 2007

Data sourced from Thomson Reuters' Web of Knowledge

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