SiC MOSFETs with thermally oxidized Ta2Si stacked on SiO2 as high-k gate insulator
Pérez-Tomás, Amador, Jennings, M. R., Gammon, P. M., Roberts, G. J., Mawby, P. A. (Philip A.), Millan, J., Godignon, P., Montserrat, J. and Mestres, N.. (2008) SiC MOSFETs with thermally oxidized Ta2Si stacked on SiO2 as high-k gate insulator. Microelectronic Engineering, Volume 85 (Number 4). pp. 704-709. ISSN 0167-9317Full text not available from this repository.
Official URL: http://dx.doi.org/10.1016/j.mee.2007.12.073
In this paper, we compare the electrical characteristics of MOS capacitors and lateral MOSFETs with oxidized Ta2Si (O-Ta2Si) as a high-k dielectric on silicon carbide or stacked on thermally grown SiO2 on SiC. MOS capacitors are used to determine the dielectric and interfacial properties of these insulators. We demonstrate that stacked SiO2/O-Ta2Si is an attractive solution for passivation of innovative SiC devices. Ta2Si deposition and oxidation is totally compatible with standard SiC MOSFET fabrication materials and processing. We demonstrate correct transistor operation for stacked O-Ta2Si on thin thermally grown SiO2 oxides. However the channel mobility of such high-k MOSFETs must be improved investigating the interface properties further. (C) 2008 Elsevier B.V. All rights reserved.
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
T Technology > TP Chemical technology
|Divisions:||Faculty of Science > Engineering|
|Library of Congress Subject Headings (LCSH):||Silicon carbide -- Electric properties, Tantalum -- Oxidation, Metal oxide semiconductor field-effect transistors, Dielectrics|
|Journal or Publication Title:||Microelectronic Engineering|
|Official Date:||April 2008|
|Number of Pages:||6|
|Page Range:||pp. 704-709|
|Access rights to Published version:||Restricted or Subscription Access|
|Funder:||Great Britain. Dept. of Trade and Industry (DTI)|
|Grant number:||TP/3/OPT/6/I/17311 (DTI)|
 Y. Song, S. Dhar, L.C. Feldman, G. Chung, J.R. Williams, J. Appl.
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