Nonparabolic coupled Poisson-Schrodinger solutions for quantized electron accumulation layers: Band bending, charge profile, and subbands at InN surfaces
King, P. D. C., Veal, T. D. (Tim D.) and McConville, C. F.. (2008) Nonparabolic coupled Poisson-Schrodinger solutions for quantized electron accumulation layers: Band bending, charge profile, and subbands at InN surfaces. Physical Review B (Condensed Matter and Materials Physics), Vol.77 (No.12). Article No.125305 . ISSN 1098-0121Full text not available from this repository.
Official URL: http://dx.doi.org/10.1103/PhysRevB.77.125305
The one-electron potential, carrier concentration profile, quantized subband state energies, and parallel dispersion relations are calculated for an accumulation layer at a semiconductor surface by solving Poisson's equation within a modified Thomas-Fermi approximation and numerically solving the Schrodinger equation for the resulting potential well. A nonparabolic conduction band, described within the Kane k.p approximation, is incorporated in the model. Example calculations are performed for a typical clean InN surface and for a variety of surface state densities and bulk carrier concentrations. Agreement is found between the model calculations and experimental measurements of the subband energies and dispersions at c-plane InN surfaces from electron tunneling spectroscopy and angle resolved photoemission spectroscopy.
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics|
|Divisions:||Faculty of Science > Physics|
|Journal or Publication Title:||Physical Review B (Condensed Matter and Materials Physics)|
|Publisher:||American Physical Society|
|Number of Pages:||7|
|Page Range:||Article No.125305|
|Access rights to Published version:||Restricted or Subscription Access|
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