King, P. D. C., Veal, T. D. (Tim D.) and McConville, C. F.. (2008) Nonparabolic coupled Poisson-Schrodinger solutions for quantized electron accumulation layers: Band bending, charge profile, and subbands at InN surfaces. Physical Review B (Condensed Matter and Materials Physics), Vol.77 (No.12). Article No.125305 . ISSN 1098-0121

Full text not available from this repository.

Abstract

The one-electron potential, carrier concentration profile, quantized subband state energies, and parallel dispersion relations are calculated for an accumulation layer at a semiconductor surface by solving Poisson's equation within a modified Thomas-Fermi approximation and numerically solving the Schrodinger equation for the resulting potential well. A nonparabolic conduction band, described within the Kane k.p approximation, is incorporated in the model. Example calculations are performed for a typical clean InN surface and for a variety of surface state densities and bulk carrier concentrations. Agreement is found between the model calculations and experimental measurements of the subband energies and dispersions at c-plane InN surfaces from electron tunneling spectroscopy and angle resolved photoemission spectroscopy.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics
Divisions:	Faculty of Science > Physics
Journal or Publication Title:	Physical Review B (Condensed Matter and Materials Physics)
Publisher:	American Physical Society
ISSN:	1098-0121
Date:	March 2008
Volume:	Vol.77
Number:	No.12
Number of Pages:	7
Page Range:	Article No.125305
Identification Number:	10.1103/PhysRevB.77.125305
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access
URI:	http://wrap.warwick.ac.uk/id/eprint/30319

Data sourced from Thomson Reuters' Web of Knowledge

Request changes to a record

Actions (login required)

View Item