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Molecular beam epitaxy Si/4H-SiC heterojunction diodes
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Mawby, P. A. (Philip A.), Pérez-Tomás, Amador, Jennings, M. R., Davis, M., Covington, James A., 1973-, Shah, V. and Grasby, T. (2007) Molecular beam epitaxy Si/4H-SiC heterojunction diodes. In: 14th International Workshop on the Physics of Semiconductor Devices, Indian Inst Technol, Mumbai, INDIA, DEC 17-20, 2007. Published in: PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007 pp. 775-780.
Full text not available from this repository.Abstract
The physical and electrical properties of silicon layers grown by molecular beam epitaxy (MBE) on commercial 4H-SiC substrates are reported. We investigate the effect of the Si doping type, Si doping concentration, Si. p temperature deposition and SiC surface cleaning procedure. Si/SiC monolithic integration of Si circuits with SiC power devices can be considered as an attractive proposition and has the potential to be applied to a broad range of applications. X-ray diffraction (XRD) and scanning electron microscopy (SEM) are used to determine the Si crystal structure (cubic silicon) and morphology. I-V and C-V measurements are performed to evaluate the rectifying diode characteristics along with the Si/SiC built-in potential and energy band offsets. In the last section, we propose that our n-n Si/SiC heteojunction diode current characteristics can be explained by an isojunction drift-diffusion and thermoionic emission model where the effect of doping concentration of the silicon layer and its conduction band offset with SiC is analysed.
| Item Type: | Conference Item (UNSPECIFIED) |
|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
| Journal or Publication Title: | PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007 |
| Publisher: | IEEE |
| ISBN: | 978-1-4244-1727-8 |
| Editor: | Narasimhan, KL and Sharma, DK |
| Date: | 2007 |
| Number of Pages: | 6 |
| Page Range: | pp. 775-780 |
| Identification Number: | 10.1109/IWPSD.2007.4472633 |
| Publication Status: | Published |
| Title of Event: | 14th International Workshop on the Physics of Semiconductor Devices |
| Location of Event: | Indian Inst Technol, Mumbai, INDIA |
| Date(s) of Event: | DEC 17-20, 2007 |
| URI: | http://wrap.warwick.ac.uk/id/eprint/30335 |
Data sourced from Thomson Reuters' Web of Knowledge
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