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Molecular beam epitaxy Si/4H-SiC heterojunction diodes
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Mawby, P. A., Pérez-Tomás, Amador, Jennings, M. R., Davis, M., Covington, James A., Shah, V. A. and Grasby, T. (2007) Molecular beam epitaxy Si/4H-SiC heterojunction diodes. In: 14th International Workshop on the Physics of Semiconductor Devices, Indian Inst Technol, Mumbai, India, 16-20 Dec 2007. Published in: International Workshop on Physics of Semiconductor Devices, 2007. IWPSD 2007 pp. 775-780. ISBN 9781424417278. doi:10.1109/IWPSD.2007.4472633
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Official URL: http://dx.doi.org/10.1109/IWPSD.2007.4472633
Abstract
The physical and electrical properties of silicon layers grown by molecular beam epitaxy (MBE) on commercial 4H-SiC substrates are reported. We investigate the effect of the Si doping type, Si doping concentration, Si. p temperature deposition and SiC surface cleaning procedure. Si/SiC monolithic integration of Si circuits with SiC power devices can be considered as an attractive proposition and has the potential to be applied to a broad range of applications. X-ray diffraction (XRD) and scanning electron microscopy (SEM) are used to determine the Si crystal structure (cubic silicon) and morphology. I-V and C-V measurements are performed to evaluate the rectifying diode characteristics along with the Si/SiC built-in potential and energy band offsets. In the last section, we propose that our n-n Si/SiC heteojunction diode current characteristics can be explained by an isojunction drift-diffusion and thermoionic emission model where the effect of doping concentration of the silicon layer and its conduction band offset with SiC is analysed.
| Item Type: | Conference Item (Paper) | ||||
|---|---|---|---|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
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| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||
| Journal or Publication Title: | International Workshop on Physics of Semiconductor Devices, 2007. IWPSD 2007 | ||||
| Publisher: | IEEE Computer Society | ||||
| ISBN: | 9781424417278 | ||||
| Editor: | Narasimhan, KL and Sharma, DK | ||||
| Official Date: | 2007 | ||||
| Dates: |
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| Number of Pages: | 6 | ||||
| Page Range: | pp. 775-780 | ||||
| DOI: | 10.1109/IWPSD.2007.4472633 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Conference Paper Type: | Paper | ||||
| Title of Event: | 14th International Workshop on the Physics of Semiconductor Devices | ||||
| Type of Event: | Workshop | ||||
| Location of Event: | Indian Inst Technol, Mumbai, India | ||||
| Date(s) of Event: | 16-20 Dec 2007 |
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