Molecular beam epitaxy Si/4H-SiC heterojunction diodes
Mawby, P. A. (Philip A.), Pérez-Tomás, Amador, Jennings, M. R., Davis, M., Covington, James A., 1973-, Shah, V. and Grasby, T. (2007) Molecular beam epitaxy Si/4H-SiC heterojunction diodes. In: 14th International Workshop on the Physics of Semiconductor Devices, Indian Inst Technol, Mumbai, INDIA, DEC 17-20, 2007. Published in: PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007 pp. 775-780.Full text not available from this repository.
The physical and electrical properties of silicon layers grown by molecular beam epitaxy (MBE) on commercial 4H-SiC substrates are reported. We investigate the effect of the Si doping type, Si doping concentration, Si. p temperature deposition and SiC surface cleaning procedure. Si/SiC monolithic integration of Si circuits with SiC power devices can be considered as an attractive proposition and has the potential to be applied to a broad range of applications. X-ray diffraction (XRD) and scanning electron microscopy (SEM) are used to determine the Si crystal structure (cubic silicon) and morphology. I-V and C-V measurements are performed to evaluate the rectifying diode characteristics along with the Si/SiC built-in potential and energy band offsets. In the last section, we propose that our n-n Si/SiC heteojunction diode current characteristics can be explained by an isojunction drift-diffusion and thermoionic emission model where the effect of doping concentration of the silicon layer and its conduction band offset with SiC is analysed.
|Item Type:||Conference Item (UNSPECIFIED)|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics
|Journal or Publication Title:||PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007|
|Editor:||Narasimhan, KL and Sharma, DK|
|Number of Pages:||6|
|Page Range:||pp. 775-780|
|Title of Event:||14th International Workshop on the Physics of Semiconductor Devices|
|Location of Event:||Indian Inst Technol, Mumbai, INDIA|
|Date(s) of Event:||DEC 17-20, 2007|
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