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Determination of the branch-point energy of InN : chemical trends in common-cation and common-anion semiconductors

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King, P. D. C., Veal, T. D. (Tim D.), Jefferson, P. H., Hatfield, S. A., Piper, L. F. J., McConville, C. F. (Chris F.), Fuchs, F., Furthmueller, J., Bechstedt, Friedhelm, Lu, H. (Hai) and Schaff, William Joseph, 1956-. (2008) Determination of the branch-point energy of InN : chemical trends in common-cation and common-anion semiconductors. Physical Review B (Condensed Matter and Materials Physics), Vol.77 (No.4). Article no. 045316 . ISSN 1098-0121

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Official URL: http://dx.doi.org/10.1103/PhysRevB.77.045316

Abstract

Bulk and surface electronic properties of Si-doped InN are investigated using high-resolution x-ray photoemission spectroscopy, optical absorption spectroscopy, and quasiparticle corrected density functional theory calculations. The branch point energy in InN is experimentally determined to lie 1.83 +/- 0.10 eV above the valence-band maximum. This high position relative to the band edges is used to explain the extreme fundamental electronic properties of the material. Far from being anomalous, these properties are reconciled within chemical trends of common-cation and common-anion semiconductors.

Item Type: Journal Article
Subjects: Q Science > QC Physics
Q Science > QD Chemistry
Divisions: Faculty of Science > Physics
Library of Congress Subject Headings (LCSH): Semiconductors, Indium compounds -- Electric properties, Energy-band theory of solids, Density functionals, Fermi surfaces
Journal or Publication Title: Physical Review B (Condensed Matter and Materials Physics)
Publisher: American Physical Society
ISSN: 1098-0121
Date: January 2008
Volume: Vol.77
Number: No.4
Number of Pages: 6
Page Range: Article no. 045316
Identification Number: 10.1103/PhysRevB.77.045316
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Funder: Engineering and Physical Sciences Research Council (EPSRC), Deutsche Forschungsgemeinschaft (DFG)
Grant number: EP/C535553/1 (EPSRC), GR/S14252/01 (EPSRC), Be1346/18-2 (DFG)
URI: http://wrap.warwick.ac.uk/id/eprint/30609

Data sourced from Thomson Reuters' Web of Knowledge

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