High doped MBE Si p-n and n-n heterojunction diodes on 4H-SiC
Pérez-Tomás, Amador, Jennings, M. R., Davis, M., Shah, V. A., Grasby, T., Covington, James A. and Mawby, P. A.. (2007) High doped MBE Si p-n and n-n heterojunction diodes on 4H-SiC. MICROELECTRONICS JOURNAL, 38 (12). pp. 1233-1237. ISSN 0026-2692Full text not available from this repository.
Official URL: http://dx.doi.org/10.1016/j.mejo.2007.09.019
The physical and electrical properties of heavily doped silicon (5 x 10(19)cm(-3)) deposited by molecular beam epitaxy (MBE) on 4H-SiC are investigated in this paper. Silicon layers on silicon carbide have a broad number of potential applications including device fabrication or passivation when oxidised. In particular, Si/SiC contacts present several atractive material advantages for the semiconductor industry and especially for SiC processing procedures for avoiding stages such as high temperature contact annealing or SiC etching. Si films of 100 nm thickness have been grown using a MBE system after different cleaning procedures on n-type (0 0 0 1) Si face 8 degrees off 4H-SiC substrates. Isotype (n-n) and an-isotype (p-n) devices were fabricated at both 500 and 900 degrees C using antimonium (Sb) or boron (B), respectively. X-ray diffraction analysis (XRD) and scanning electronic mircorscope (SEM) have been used to investigate the crystal composition and morphology of the deposited layers. The electrical mesurements were performed to determine the rectifiying contact characteristics and band offsets. (C) 2007 Elsevier Ltd. All rights reserved.
|Item Type:||Journal Article|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering
|Journal or Publication Title:||MICROELECTRONICS JOURNAL|
|Publisher:||ELSEVIER SCI LTD|
|Official Date:||December 2007|
|Number of Pages:||5|
|Page Range:||pp. 1233-1237|
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