Skip to content Skip to navigation
University of Warwick
  • Study
  • |
  • Research
  • |
  • Business
  • |
  • Alumni
  • |
  • News
  • |
  • About

University of Warwick
Publications service & WRAP

Highlight your research

  • WRAP
    • Home
    • Search WRAP
    • Browse by Warwick Author
    • Browse WRAP by Year
    • Browse WRAP by Subject
    • Browse WRAP by Department
    • Browse WRAP by Funder
    • Browse Theses by Department
  • Publications Service
    • Home
    • Search Publications Service
    • Browse by Warwick Author
    • Browse Publications service by Year
    • Browse Publications service by Subject
    • Browse Publications service by Department
    • Browse Publications service by Funder
  • Help & Advice
University of Warwick

The Library

  • Login
  • Admin

High doped MBE Si p-n and n-n heterojunction diodes on 4H-SiC

Tools
- Tools
+ Tools

Pérez-Tomás, Amador, Jennings, M. R., Davis, M., Shah, V. A., Grasby, T., Covington, James A. and Mawby, P. A. (2007) High doped MBE Si p-n and n-n heterojunction diodes on 4H-SiC. MICROELECTRONICS JOURNAL, 38 (12). pp. 1233-1237. doi:10.1016/j.mejo.2007.09.019

Research output not available from this repository.

Request-a-Copy directly from author or use local Library Get it For Me service.

Official URL: http://dx.doi.org/10.1016/j.mejo.2007.09.019

Request Changes to record.

Abstract

The physical and electrical properties of heavily doped silicon (5 x 10(19)cm(-3)) deposited by molecular beam epitaxy (MBE) on 4H-SiC are investigated in this paper. Silicon layers on silicon carbide have a broad number of potential applications including device fabrication or passivation when oxidised. In particular, Si/SiC contacts present several atractive material advantages for the semiconductor industry and especially for SiC processing procedures for avoiding stages such as high temperature contact annealing or SiC etching. Si films of 100 nm thickness have been grown using a MBE system after different cleaning procedures on n-type (0 0 0 1) Si face 8 degrees off 4H-SiC substrates. Isotype (n-n) and an-isotype (p-n) devices were fabricated at both 500 and 900 degrees C using antimonium (Sb) or boron (B), respectively. X-ray diffraction analysis (XRD) and scanning electronic mircorscope (SEM) have been used to investigate the crystal composition and morphology of the deposited layers. The electrical mesurements were performed to determine the rectifiying contact characteristics and band offsets. (C) 2007 Elsevier Ltd. All rights reserved.

Item Type: Journal Article
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
T Technology
Journal or Publication Title: MICROELECTRONICS JOURNAL
Publisher: ELSEVIER SCI LTD
ISSN: 0026-2692
Official Date: December 2007
Dates:
DateEvent
December 2007UNSPECIFIED
Volume: 38
Number: 12
Number of Pages: 5
Page Range: pp. 1233-1237
DOI: 10.1016/j.mejo.2007.09.019
Publication Status: Published

Data sourced from Thomson Reuters' Web of Knowledge

Request changes or add full text files to a record

Repository staff actions (login required)

View Item View Item
twitter

Email us: wrap@warwick.ac.uk
Contact Details
About Us