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SiC MOSFET channel mobility dependence on substrate doping and temperature considering high density of interface traps
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Pérez-Tomás, Amador, Jennings, M. R., Mawby, P. A. (Philip A.), Covington, James A., 1973-, Godignon, P., Millan, J. and Mestres, N. (2007) SiC MOSFET channel mobility dependence on substrate doping and temperature considering high density of interface traps. In: 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, ENGLAND, SEP, 2006. Published in: Silicon Carbide and Related Materials 2006, 556-557 pp. 835-838.
Full text not available from this repository.Abstract
In prior work we have proposed a mobility model for describing the mobility degradation observed in SiC MOSFET devices, suitable for being implemented into a commercial simulator, including Coulomb scattering effects at interface traps. In this paper, the effect of temperature and doping on the channel mobility has been modelled. The computation results suggest that the Coulomb scattering at charged interface traps is the dominant degradation mechanism. Simulations also show that a temperature increase implies an improvement in field-effect mobility since the inversion channel concentration increases and the trapped charge is reduced due to bandgap narrowing. In contrast, increasing the substrate impurity concentration further degrades the field-effect mobility since the inversion charge concentration decreases for a given gate bias. We have good agreement between the computational results and experimental mobility measurements.
| Item Type: | Conference Item (UNSPECIFIED) |
|---|---|
| Subjects: | T Technology > TA Engineering (General). Civil engineering (General) |
| Series Name: | MATERIALS SCIENCE FORUM |
| Journal or Publication Title: | Silicon Carbide and Related Materials 2006 |
| Publisher: | TRANS TECH PUBLICATIONS LTD |
| ISBN: | ***************** |
| ISSN: | 0255-5476 |
| Editor: | Wright, N and Johnson, CM and Vassilevski, K and Nikitina, I and Horsfall, A |
| Date: | 2007 |
| Volume: | 556-557 |
| Number of Pages: | 4 |
| Page Range: | pp. 835-838 |
| Publication Status: | Published |
| Title of Event: | 6th European Conference on Silicon Carbide and Related Materials |
| Location of Event: | Newcastle upon Tyne, ENGLAND |
| Date(s) of Event: | SEP, 2006 |
| URI: | http://wrap.warwick.ac.uk/id/eprint/31037 |
Data sourced from Thomson Reuters' Web of Knowledge
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