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SOI-CMOS based single crystal silicon micro-heaters for gas sensors

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Iwaki, Takao, Covington, James A., Gardner, J. W., Udrea, Florin, Blackman, C. S. and Parkin, I. P. (2006) SOI-CMOS based single crystal silicon micro-heaters for gas sensors. In: 5th IEEE Sensors Conference, Daegu, SOUTH KOREA, OCT 22-25, 2006. Published in: 2006 IEEE SENSORS, VOLS 1-3 pp. 460-463. ISBN 978-1-4244-0375-2. ISSN 1930-0395.

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Abstract

Here we report on novel high temperature gas sensors that have been fabricated using an SOI (Silicon-oninsulator) -CMOS process and deep RIE back-etching. These sensors offer ultra-low power consumption, low unit cost, and excellent thermal stability. The highly-doped single crystal silicon (SCS) layer of a standard SOI-CMOS process, which is traditionally used to form the source and drain regions of a MOSFET, is used, for the first time, to form a resistive heater of a micro-hotplate in a high-temperature gas sensor. Our sensors have a power consumption of only 12-30 mW at a temperature of 500 degrees C. We have observed that the drift in resistance of a SCS heater held at 500 degrees C for 500 hours, without burn-in, was less than 1 %. SCS micro-hotplates are not only suitable for chemoresistive sensors, as described here, but also calorimetric gas sensors that require these high operating temperatures. Tungsten oxide nanorods have been deposited onto our micro-hotplates by atmospheric chemical vapour deposition and have shown reasoanble sensitivity to ethanol vapour in air.

Item Type: Conference Item (UNSPECIFIED)
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Series Name: IEEE Sensors
Journal or Publication Title: 2006 IEEE SENSORS, VOLS 1-3
Publisher: IEEE
ISBN: 978-1-4244-0375-2
ISSN: 1930-0395
Official Date: 2006
Dates:
DateEvent
2006UNSPECIFIED
Number of Pages: 4
Page Range: pp. 460-463
Publication Status: Published
Title of Event: 5th IEEE Sensors Conference
Location of Event: Daegu, SOUTH KOREA
Date(s) of Event: OCT 22-25, 2006

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