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High mobility strained Ge pMOSFETs with high-k/metal gate
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Nicholas, Gareth, Grasby, T. J., Lgoni, D. J. E. Fu, Beer, C. S., Parsons, J., Meuris, M. and Heyns, M. M. (2007) High mobility strained Ge pMOSFETs with high-k/metal gate. IEEE Electron Device Letters, Vol.28 (No.9). pp. 825-827. doi:10.1109/LED.2007.903405 ISSN 0741-3106.
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Official URL: http://dx.doi.org/10.1109/LED.2007.903405
Abstract
Compressively strained Ge long channel ring-type pMOSFETs with high-kappa Si/SiO2/HfO2/TiN gate stacks are fabricated on Si0.2Ge0.8 virtual substrates. Effective oxide thickness is approximately 1.4 nm with low gate leakage current. A peak hole mobility of 640 cm(2)/V center dot s and up to a four times enhancement over the Si/SiO2 universal curve are observed. Parasitic conduction within the Si-cap layers degrades the mobility at large vertical fields, although up to a 2.5 times enhancement over universal remains at a field of 0.9 MV/cm.
Item Type: | Journal Article | ||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||
Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Journal or Publication Title: | IEEE Electron Device Letters | ||||
Publisher: | IEEE | ||||
ISSN: | 0741-3106 | ||||
Official Date: | September 2007 | ||||
Dates: |
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Volume: | Vol.28 | ||||
Number: | No.9 | ||||
Number of Pages: | 3 | ||||
Page Range: | pp. 825-827 | ||||
DOI: | 10.1109/LED.2007.903405 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access |
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