Characterization and modeling of n-n Si/SiC heterojunction diodes
Pérez-Tomás, Amador, Jennings, M. R., Davis, M. C., Covington, James A., Mawby, P. A., Shah, V. A. and Grasby, T.. (2007) Characterization and modeling of n-n Si/SiC heterojunction diodes. Journal of Applied Physics, Vol.102 (No.1). Article: 014505. ISSN 0021-8979Full text not available from this repository.
Official URL: http://dx.doi.org/10.1063/1.2752148
In this paper we investigate the physical and electrical properties of silicon layers grown by molecular beam epitaxy on 4H-SiC substrates, evaluating the effect of the Si doping, Si temperature deposition, and SiC surface cleaning procedure. Si/SiC monolithic integration of Si circuits with SiC power devices can be considered as an attractive proposition and has the potential to be applied to a broad range of applications. X-ray diffraction and scanning electron microscopy are used to determine the Si crystal structure (cubic silicon) and morphology. I-V and C-V measurements are performed to evaluate the rectifying diode characteristics along with the Si/SiC built-in potential and energy band offsets. In the last section, we propose that our Si/SiC heteojunction diode current characteristics can be explained by an isojunction drift-diffusion and thermoionic emission model where the effect of doping concentration of the silicon layer and its conduction band offset with SiC is analyzed.
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics|
|Divisions:||Faculty of Science > Engineering
Faculty of Science > Physics
|Journal or Publication Title:||Journal of Applied Physics|
|Publisher:||American Institute of Physics|
|Official Date:||1 July 2007|
|Number of Pages:||5|
|Page Range:||Article: 014505|
|Access rights to Published version:||Restricted or Subscription Access|
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