The Library
Characterization and modeling of n-n Si/SiC heterojunction diodes
Tools
Tools
Tools
Pérez-Tomás, Amador, Jennings, M. R., Davis, M. C., Covington, James A., Mawby, P. A., Shah, V. A. and Grasby, T. (2007) Characterization and modeling of n-n Si/SiC heterojunction diodes. Journal of Applied Physics, Vol.102 (No.1). Article: 014505. doi:10.1063/1.2752148 ISSN 0021-8979.
Research output not available from this repository.
Request-a-Copy directly from author or use local Library Get it For Me service.
Official URL: http://dx.doi.org/10.1063/1.2752148
Abstract
In this paper we investigate the physical and electrical properties of silicon layers grown by molecular beam epitaxy on 4H-SiC substrates, evaluating the effect of the Si doping, Si temperature deposition, and SiC surface cleaning procedure. Si/SiC monolithic integration of Si circuits with SiC power devices can be considered as an attractive proposition and has the potential to be applied to a broad range of applications. X-ray diffraction and scanning electron microscopy are used to determine the Si crystal structure (cubic silicon) and morphology. I-V and C-V measurements are performed to evaluate the rectifying diode characteristics along with the Si/SiC built-in potential and energy band offsets. In the last section, we propose that our Si/SiC heteojunction diode current characteristics can be explained by an isojunction drift-diffusion and thermoionic emission model where the effect of doping concentration of the silicon layer and its conduction band offset with SiC is analyzed.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Subjects: | Q Science > QC Physics | ||||
| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering Faculty of Science, Engineering and Medicine > Science > Physics |
||||
| Journal or Publication Title: | Journal of Applied Physics | ||||
| Publisher: | American Institute of Physics | ||||
| ISSN: | 0021-8979 | ||||
| Official Date: | 1 July 2007 | ||||
| Dates: |
|
||||
| Volume: | Vol.102 | ||||
| Number: | No.1 | ||||
| Number of Pages: | 5 | ||||
| Page Range: | Article: 014505 | ||||
| DOI: | 10.1063/1.2752148 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Access rights to Published version: | Restricted or Subscription Access |
Data sourced from Thomson Reuters' Web of Knowledge
Request changes or add full text files to a record
Repository staff actions (login required)
 |
View Item |
