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Simulation and optimization of diode and insulated gate bipolar transistor interaction in a chopper cell using MATLAB and Simulink
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Bryant, Angus T., Palmer, Patrick R., Santi, Enrico and Hudgins, Jerry L. (2007) Simulation and optimization of diode and insulated gate bipolar transistor interaction in a chopper cell using MATLAB and Simulink. IEEE Transactions on Industry Applications, Vol.43 (No.4). pp. 874-883. doi:10.1109/TIA.2007.900443 ISSN 0093-9994.
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Official URL: http://dx.doi.org/10.1109/TIA.2007.900443
Abstract
Recently, a simulation method for power electronic devices has emerged, which has high accuracy and short run times based on a Fourier model of the device physics. This paper describes the use of the Fourier models for diodes and insulated gate bipolar transistors (IGBTs) and implementation in MATLAB and Simulink in a formal optimization strategy. In particular, this paper investigates coupled circuit, diode, and IGBT behavior. Conclusions are drawn concerning device loading and circuit design, particularly the role of stray inductance.
Item Type: | Journal Article | ||||
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Subjects: | T Technology > TA Engineering (General). Civil engineering (General) T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||
Journal or Publication Title: | IEEE Transactions on Industry Applications | ||||
Publisher: | IEEE | ||||
ISSN: | 0093-9994 | ||||
Official Date: | July 2007 | ||||
Dates: |
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Volume: | Vol.43 | ||||
Number: | No.4 | ||||
Number of Pages: | 10 | ||||
Page Range: | pp. 874-883 | ||||
DOI: | 10.1109/TIA.2007.900443 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access | ||||
Title of Event: | 37th Annual Meeting of the Industry-Applications-Society | ||||
Location of Event: | Pittsburgh, PA | ||||
Date(s) of Event: | October 12-18, 2002 |
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