The Library
Growth of dilute nitride alloys of GaInSb lattice-matched to GaSb
Tools
Tools
Tools
Jefferson, P. H., Buckle, L., Bennett, B. R., Veal, T. D. (Tim D.), Walker, D., Wilson, Neil R., Piper, L. F. J., Thomas, P. A., Ashley, T. and McConville, C. F. (Chris F.). (2007) Growth of dilute nitride alloys of GaInSb lattice-matched to GaSb. Journal of Crystal Growth, Vol.304 (No.2). pp. 338-341. ISSN 0022-0248
Full text not available from this repository.
Official URL: http://dx.doi.org/10.1016/j.jcrysgro.2007.02.033
Abstract
The growth of dilute nitride alloys of GaInSb by plasma-assisted molecular beam epitaxy is reported. The principle of lattice matching GaInNSb alloys to GaSb(001) substrates is demonstrated. High resolution X-ray diffraction rocking curves and reciprocal space maps indicate the high crystalline quality of the GaInNSb layers and illustrate a lattice match to Gasb with nitrogen and indium incorporations of 1.8% and 8.4%, respectively. The rms roughness of a nominally lattice matched GaInNSb/Gasb(001) layer was determined from atomic force microscopy to be similar to 1.8 nm. (c) 2007 Elsevier B.V. All rights reserved.
| Item Type: | Journal Article |
|---|---|
| Subjects: | Q Science > QD Chemistry |
| Divisions: | Faculty of Science > Physics |
| Journal or Publication Title: | Journal of Crystal Growth |
| Publisher: | Elsevier BV, North-Holland |
| ISSN: | 0022-0248 |
| Date: | 15 June 2007 |
| Volume: | Vol.304 |
| Number: | No.2 |
| Number of Pages: | 4 |
| Page Range: | pp. 338-341 |
| Identification Number: | 10.1016/j.jcrysgro.2007.02.033 |
| Status: | Peer Reviewed |
| Publication Status: | Published |
| Access rights to Published version: | Restricted or Subscription Access |
| URI: | http://wrap.warwick.ac.uk/id/eprint/31760 |
Data sourced from Thomson Reuters' Web of Knowledge
Actions (login required)
 |
View Item |
