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Growth of dilute nitride alloys of GaInSb lattice-matched to GaSb
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Jefferson, P. H., Buckle, L., Bennett, B. R., Veal, T. D., Walker, David, Wilson, Neil R., Piper, L. F. J., Thomas, Pam A., Ashley, T. and McConville, C. F. (2007) Growth of dilute nitride alloys of GaInSb lattice-matched to GaSb. Journal of Crystal Growth, Vol.304 (No.2). pp. 338-341. doi:10.1016/j.jcrysgro.2007.02.033 ISSN 0022-0248.
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Official URL: http://dx.doi.org/10.1016/j.jcrysgro.2007.02.033
Abstract
The growth of dilute nitride alloys of GaInSb by plasma-assisted molecular beam epitaxy is reported. The principle of lattice matching GaInNSb alloys to GaSb(001) substrates is demonstrated. High resolution X-ray diffraction rocking curves and reciprocal space maps indicate the high crystalline quality of the GaInNSb layers and illustrate a lattice match to Gasb with nitrogen and indium incorporations of 1.8% and 8.4%, respectively. The rms roughness of a nominally lattice matched GaInNSb/Gasb(001) layer was determined from atomic force microscopy to be similar to 1.8 nm. (c) 2007 Elsevier B.V. All rights reserved.
Item Type: | Journal Article | ||||
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Subjects: | Q Science > QD Chemistry | ||||
Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Journal or Publication Title: | Journal of Crystal Growth | ||||
Publisher: | Elsevier BV, North-Holland | ||||
ISSN: | 0022-0248 | ||||
Official Date: | 15 June 2007 | ||||
Dates: |
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Volume: | Vol.304 | ||||
Number: | No.2 | ||||
Number of Pages: | 4 | ||||
Page Range: | pp. 338-341 | ||||
DOI: | 10.1016/j.jcrysgro.2007.02.033 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access |
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