The Library
Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs
Tools
von Haartman, M., Malm, B. G., Hellström, P.-E., Östling, Mikael, Grasby, T. J., Whall, Terry E., Parker, Evan H. C., Lyutovich, K., Oehme, M. and Kasper, E. (2007) Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs. Solid-State Electronics, Vol.51 (No.5). pp. 771-777. doi:10.1016/j.sse.2007.03.011 ISSN 0038-1101.
Research output not available from this repository.
Request-a-Copy directly from author or use local Library Get it For Me service.
Official URL: http://dx.doi.org/10.1016/j.sse.2007.03.011
Abstract
Mobility and low-frequency (LF) noise were studied in tensile strained Si n- and pMOSFETs fabricated on relaxed SiGe virtual substrates. Both the impact of the channel orientation ((110) or (100) on (100) Si) and the tensile strain were carefully investigated. Two types of virtual substrates were used; a thin relaxed SiGe layer (20% Ge) and a thick one (27% Ge). The strained Si nMOSFETs fabricated on the thin substrate showed similar LF noise level as in the reference devices, whereas the thick substrate caused severely increased LF noise in the nMOSFETs. The latter was linked to the higher Ge concentration and explained by possible misfit dislocations and increased defect densities, likely resulting from strain relaxation caused by ion implantation damage. On the other hand, considerably lower LF noise was achieved in the pMOSFETs on the thick SiGe. The channel orientation was not found to have a significant influence on the LF noise performance in any of the studied devices. (c) 2007 Elsevier Ltd. All rights reserved.
Item Type: | Journal Article | ||||
---|---|---|---|---|---|
Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
||||
Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Journal or Publication Title: | Solid-State Electronics | ||||
Publisher: | Elsevier | ||||
ISSN: | 0038-1101 | ||||
Official Date: | May 2007 | ||||
Dates: |
|
||||
Volume: | Vol.51 | ||||
Number: | No.5 | ||||
Number of Pages: | 7 | ||||
Page Range: | pp. 771-777 | ||||
DOI: | 10.1016/j.sse.2007.03.011 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access |
Data sourced from Thomson Reuters' Web of Knowledge
Request changes or add full text files to a record
Repository staff actions (login required)
View Item |