Analysis of Al/Ti, Al/Ni multiple and triple layer contacts to p-type 4H-SiC
Jennings, M. R., Pérez-Tomás, Amador, Davies, M., Walker, D., Zhu, L., Losee, P., Huang, W., Balachandran, S., Guy, O. J., Covington, James A., 1973-, Chow, T. P. and Mawby, P. A. (Philip A.). (2007) Analysis of Al/Ti, Al/Ni multiple and triple layer contacts to p-type 4H-SiC. Solid-State Electronics, Vol.51 (No.5). pp. 797-801. ISSN 0038-1101Full text not available from this repository.
Official URL: http://dx.doi.org/10.1016/j.sse.2007.02.037
This paper presents an experimental investigation into different metallisation structures aimed at reducing the contact resistance and morphology of p-type contacts to 4H-SiC. The structures are based on a combination of Al/Ni and Al/Ti layers. The lowest specific contact resistivity obtained was based on a triple layer Al/Ti/Al contact, measured at 5.0 x 10(-6) Omega cm(2). Analogously, for the triple layer contacts comprised of Al/Ni/Al, the lowest specific contact resistivity was measured at 4.9 x 10(-4) Omega cm(2). In all cases it was found that the multiple layer structures remained rectifying even after annealing. A range of physical characterisation techniques were used to investigate these different structures. X-ray diffraction (XRD) scans point to enhanced formation of silicides for triple layer contacts based on Al/Ti (Ti3SiC2) and Al/Ni (NiSi,) when compared to multiple layer contacts. Scanning electron microscope (SEM) and wavelength dispersive analysis (WDA) measurements indicate that a multiple layer metallisation improves the morphology of the contact with respect to the Al spreading, which is known to be problematic during a high temperature anneal. (c) 2007 Elsevier Ltd. All rights reserved.
|Item Type:||Journal Article|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics
|Divisions:||Faculty of Science > Engineering
Faculty of Science > Physics
|Journal or Publication Title:||Solid-State Electronics|
|Number of Pages:||5|
|Page Range:||pp. 797-801|
|Access rights to Published version:||Restricted or Subscription Access|
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