Growth and characterisation of high quality MBE grown InNxSb1-x
Jefferson, P. H., Buckle, L., Walker, D., Veal, T. D. (Tim D.), Coomber, S., Thomas, P. A., Ashley, T. and McConville, C. F. (Chris F.). (2007) Growth and characterisation of high quality MBE grown InNxSb1-x. physica status solidi (RRL) – Rapid Research Letters, Vol.1 (No.3). pp. 104-106. ISSN 1862-6254Full text not available from this repository.
Official URL: http://dx.doi.org/10.1002/pssr.200701035
The growth, structural and optical characterisation of dilute nitride allows of InSb grown by plasma-assisted molecular beam epitaxy is presented. The lawyers were characterised by high-resolution X-ray diffraction indicating high crystalline quality and nitrogen incorporations up to 0.68%. Fourier-transform infrared absorption measurement reveal the position of the absorption edge to be a result of the competing effects of bandgap reduction (due to nitrogen incorporation and bandgap renormalisation) and Moss-Burstein band filling. The bandgap of InNSb as a function of nitrogen incorporation (using a 5-band k . p Hamiltonian and parameters from tight binding calculations) highlighting the applicability of the material in exploiting the atmospheric transmission window [S.D. Lord, NASA Technical Memorandum (1992) 103957] for long wavelength applications. (c) 2007 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim.
|Item Type:||Journal Article|
|Subjects:||T Technology > TA Engineering (General). Civil engineering (General)
Q Science > QC Physics
|Divisions:||Faculty of Science > Physics|
|Journal or Publication Title:||physica status solidi (RRL) – Rapid Research Letters|
|Publisher:||Wiley - V C H Verlag GmbH & Co. KGaA|
|Number of Pages:||3|
|Page Range:||pp. 104-106|
|Access rights to Published version:||Restricted or Subscription Access|
Actions (login required)