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Calibration of boron concentration in CVD single crystal diamond combining ultralow energy secondary ions mass spectrometry and high resolution X-ray diffraction
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Guzmand de la Mata, B., Sanz-Hervas, A., Dowsett, M. G., Schwitters, M. and Twitchen, D. (2007) Calibration of boron concentration in CVD single crystal diamond combining ultralow energy secondary ions mass spectrometry and high resolution X-ray diffraction. Diamond and Related Materials, Vol.16 (No.4-7). pp. 809-814. doi:10.1016/j.diamond.2006.11.043 ISSN 0925-9635.
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Official URL: http://dx.doi.org/10.1016/j.diamond.2006.11.043
Abstract
In this work, we combine ultralow energy secondary ion mass spectrometry (uleSIMS) and high resolution X-ray diffraction (HRXRD) for the analysis of boron doped single crystal diamond. CVD layers of nominal boron concentrations 1.3 center dot 10(21) At/cm(3) 2.0 center dot 10(21) At/cm(3), 6.9 center dot 10(21) At/ cm(3) and 3.8 center dot 10(22) At/cm(3) have been characterized by uleSINIS at I keV, 500 eV and 300 eV using normal incidence O-2(+) and by HRXRD. We show that the enhancement of C-12(+) signal as a function of boron concentration observed in uleSIMS analysis of heavily doped layers compared to intrinsic diamond is due to a change in the ionization probability for carbon rather than to a change in erosion rate or post-ionization in the gas phase. For this reason, calibrating the boron concentration using a relative sensitivity factor (RSF) derived from an implanted reference material, which will naturally have a different ionization probability for carbon, is not accurate and a calibration curve needs to be obtained from an independent analysis technique such as nuclear reaction analysis (NRA). Simulation and measurement of HRXRD 113 asymmetric and 004 symmetric reflections have confirmed that the layers grew coherently to the substrate. The peak strain in the samples has been obtained from the HRXRD patterns by comparison between simulation and experiments, being similar to 0.41 center dot 10(-3), similar to 0.43 center dot 10(-3) and similar to 1.30 center dot 10(-3) for the first three samples. The peaks in the experimental profiles are broad compared to the simulations of uniform layers, which is explained by the graded composition of the layers, shown by the uleSIMS profiles. (C) 2006 Elsevier B.V. All rights reserved.
Item Type: | Journal Article | ||||
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Subjects: | T Technology > TA Engineering (General). Civil engineering (General) | ||||
Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Journal or Publication Title: | Diamond and Related Materials | ||||
Publisher: | Elsevier S.A. | ||||
ISSN: | 0925-9635 | ||||
Official Date: | April 2007 | ||||
Dates: |
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Volume: | Vol.16 | ||||
Number: | No.4-7 | ||||
Number of Pages: | 6 | ||||
Page Range: | pp. 809-814 | ||||
DOI: | 10.1016/j.diamond.2006.11.043 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access | ||||
Title of Event: | 17th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide | ||||
Type of Event: | Conference | ||||
Location of Event: | Estoril, Portugal | ||||
Date(s) of Event: | September 03-08, 2006 |
Data sourced from Thomson Reuters' Web of Knowledge
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