King, P. D. C., Veal, T. D. (Tim D.), Jefferson, P. H., McConville, C. F. (Chris F.), Lu, Hai and Schaff, W. J.. (2007) Variation of band bending at the surface of Mg-doped InGaN: evidence of p-type conductivity across the composition range. Physical Review B, 75 (11). Article: 115312. ISSN 1098-0121

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Abstract

The variation of band bending as a function of composition at oxidized (0001) surfaces of Mg-doped InxGa1-xN is investigated using x-ray photoelectron spectroscopy. Distinctly different trends in barrier height are seen for the Mg-doped compared to undoped alloys, which is explained in terms of Fermi-level pinning at the surface and virtual gap states. Solutions of Poisson's equation within the modified Thomas-Fermi approximation are used to model the band bending and corresponding variation of carrier concentration with depth below the surface. A transition from a surface inversion layer for In-rich alloys to a surface hole depletion layer for Ga-rich alloys occurs at x approximate to 0.49. The trend in barrier height, calculated space-charge profiles, and difference of barrier height for undoped and Mg-doped InN indicate that Mg doping induces bulk p-type conductivity across the entire composition range.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics
Divisions:	Faculty of Science > Physics
Journal or Publication Title:	Physical Review B
Publisher:	American Physical Society
ISSN:	1098-0121
Date:	March 2007
Volume:	75
Number:	11
Number of Pages:	7
Page Range:	Article: 115312
Identification Number:	10.1103/PhysRevB.75.115312
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access
URI:	http://wrap.warwick.ac.uk/id/eprint/32149

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