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Valence band offset of InN/AlN heterojunctions measured by x-ray photoelectron spectroscopy
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King, P. D. C., Veal, T. D. (Tim D.), Jefferson, P. H., McConville, C. F. (Chris F.), Wang, T., Parbrook, P. J., Lu, Hai and Schaff, W. J.. (2007) Valence band offset of InN/AlN heterojunctions measured by x-ray photoelectron spectroscopy. Applied Physics Letters, Vol.90 (No.13). Article: 132105. ISSN 0003-6951
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Official URL: http://dx.doi.org/10.1063/1.2716994
Abstract
The valence band offset of wurtzite-InN/AlN (0001) heterojunctions is determined by x-ray photoelectron spectroscopy to be 1.52 +/- 0.17 eV. Together with the resulting conduction band offset of 4.0 +/- 0.2 eV, a type-I heterojunction forms between InN and AlN in the straddling arrangement. (c) 2007 American Institute of Physics.
| Item Type: | Journal Article |
|---|---|
| Subjects: | Q Science > QC Physics |
| Divisions: | Faculty of Science > Physics |
| Journal or Publication Title: | Applied Physics Letters |
| Publisher: | American Institute of Physics |
| ISSN: | 0003-6951 |
| Date: | 26 March 2007 |
| Volume: | Vol.90 |
| Number: | No.13 |
| Number of Pages: | 3 |
| Page Range: | Article: 132105 |
| Identification Number: | 10.1063/1.2716994 |
| Status: | Peer Reviewed |
| Publication Status: | Published |
| Access rights to Published version: | Restricted or Subscription Access |
| URI: | http://wrap.warwick.ac.uk/id/eprint/32165 |
Data sourced from Thomson Reuters' Web of Knowledge
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