Skip to content Skip to navigation
University of Warwick
  • Study
  • |
  • Research
  • |
  • Business
  • |
  • Alumni
  • |
  • News
  • |
  • About

University of Warwick
Publications service & WRAP

Highlight your research

  • WRAP
    • Home
    • Search WRAP
    • Browse by Warwick Author
    • Browse WRAP by Year
    • Browse WRAP by Subject
    • Browse WRAP by Department
    • Browse WRAP by Funder
    • Browse Theses by Department
  • Publications Service
    • Home
    • Search Publications Service
    • Browse by Warwick Author
    • Browse Publications service by Year
    • Browse Publications service by Subject
    • Browse Publications service by Department
    • Browse Publications service by Funder
  • Statistics
  • Help & Advice
University of Warwick

The Library

  • Login

Doping-dependence of subband energies in quantized electron accumulation at InN surfaces

Tools
- Tools
+ Tools

Veal, T. D. (Tim D.), Piper, L. F. J., Phillips, M. R., Zareie, M. H., Lu, Hai, Schaff, W. J. and McConville, C. F. (Chris F.). (2007) Doping-dependence of subband energies in quantized electron accumulation at InN surfaces. Physica Status Solidi (a), Vol.204 (No.2). pp. 536-542. ISSN 0031-8965

Full text not available from this repository.
Official URL: http://dx.doi.org/10.1002/pssa.200673226

Abstract

Electron tunnelling spectroscopy is used to investigate the quantized electron accumulation at the surfaces of wurtzite InN with different doping levels. The tunnelling spectra of InN-oxide-tip junctions recorded in air at room temperature exhibit a similar to 0.6 V plateau, corresponding to the band gap of InN, and a gap between onsets of 1.3 V, consistent with the separation between the valence band maximum and the pinned Fermi level at the oxidized InN surface. Also observed within the tunnelling spectra are additional features between the conduction band minimum and the pinned Fermi level. These features are attributed to surface-bound quantized states associated with the potential well formed by the downward band bending at the InN-oxide interface. Their energetic positions are dependent upon the doping level of the InN films and coincide with calculated subband energies. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Item Type: Journal Article
Subjects: T Technology > TA Engineering (General). Civil engineering (General)
Q Science > QC Physics
Divisions: Faculty of Science > Physics
Journal or Publication Title: Physica Status Solidi (a)
Publisher: Wiley - VCH Verlag GmbH & Co. KGaA
ISSN: 0031-8965
Date: February 2007
Volume: Vol.204
Number: No.2
Number of Pages: 7
Page Range: pp. 536-542
Identification Number: 10.1002/pssa.200673226
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Title of Event: 2nd International Workshop on Modulation Spectroscopy of Semiconductor Structures
Type of Event: Other
Location of Event: Wroclaw, Poland
Date(s) of Event: June 29-July 01, 2006
URI: http://wrap.warwick.ac.uk/id/eprint/32335

Data sourced from Thomson Reuters' Web of Knowledge

Request changes to a record

Actions (login required)

View Item View Item
twitter

Email us: publications@warwick.ac.uk
Contact Details
About Us