Skip to content Skip to navigation
University of Warwick
  • Study
  • |
  • Research
  • |
  • Business
  • |
  • Alumni
  • |
  • News
  • |
  • About

University of Warwick
Publications service & WRAP

Highlight your research

  • WRAP
    • Home
    • Search WRAP
    • Browse by Warwick Author
    • Browse WRAP by Year
    • Browse WRAP by Subject
    • Browse WRAP by Department
    • Browse WRAP by Funder
    • Browse Theses by Department
  • Publications Service
    • Home
    • Search Publications Service
    • Browse by Warwick Author
    • Browse Publications service by Year
    • Browse Publications service by Subject
    • Browse Publications service by Department
    • Browse Publications service by Funder
  • Help & Advice
University of Warwick

The Library

  • Login
  • Admin

Heteroepitaxial growth of InAs on GaAS(001) by in situ STM located inside MBE growth chamber

Tools
- Tools
+ Tools

Tsukamoto, S., Bell, Gavin R. and Arakawa, Y. (2006) Heteroepitaxial growth of InAs on GaAS(001) by in situ STM located inside MBE growth chamber. In: 6th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces (ESPS-NIS 2006), Univ Nottingham, Nottingham, ENGLAND, APR 03-05, 2006. Published in: MICROELECTRONICS JOURNAL, 37 (12 Sp. Iss. SI). pp. 1498-1504. doi:10.1016/j.mejo.2006.05.011 ISSN 0026-2692.

Research output not available from this repository.

Request-a-Copy directly from author or use local Library Get it For Me service.

Official URL: http://dx.doi.org/10.1016/j.mejo.2006.05.011

Request Changes to record.

Abstract

The growth of InAs on GaAs(001) is of great interest primarily due to the self-assembly of arrays of quantum dots (QDs) with excellent opto-electronic properties. However, a basic understanding of their spontaneous formation is lacking. Advanced experimental methods are required to probe these nanostructures dynamically in order to elucidate their growth mechanism. Scanning tunneling microscopy (STM) has been successfully applied to many GaAs-based materials grown by molecular beam epitaxy (MBE). Typical STM-MBE experiments involve quenching the sample and transferring it to a remote STM chamber under arsenic-free ultra-high vacuum. In the case of GaAs-based materials grown at substrate temperatures of 400-600 degrees C, operating the STM at room temperature ensures that the surface is essentially static on the time scale of STM imaging. To attempt dynamic experiments requires a system in which STM and MBE are incorporated into one unit in order to scan in situ during growth. Here, we discuss in situ STM results from just such a system, covering both QDs and the dynamics of the wetting layer. (c) 2006 Elsevier Ltd. All rights reserved.

Item Type: Conference Item (UNSPECIFIED)
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
T Technology
Journal or Publication Title: MICROELECTRONICS JOURNAL
Publisher: ELSEVIER SCI LTD
ISSN: 0026-2692
Official Date: December 2006
Dates:
DateEvent
December 2006UNSPECIFIED
Volume: 37
Number: 12 Sp. Iss. SI
Number of Pages: 7
Page Range: pp. 1498-1504
DOI: 10.1016/j.mejo.2006.05.011
Publication Status: Published
Title of Event: 6th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces (ESPS-NIS 2006)
Location of Event: Univ Nottingham, Nottingham, ENGLAND
Date(s) of Event: APR 03-05, 2006

Data sourced from Thomson Reuters' Web of Knowledge

Request changes or add full text files to a record

Repository staff actions (login required)

View Item View Item
twitter

Email us: wrap@warwick.ac.uk
Contact Details
About Us