Field-effect mobility temperature modeling of 4H-SiC metal-oxide-semiconductor transistors
Pérez-Tomás, Amador, Brosselard, P., Godignon, P., Millan, J., Mestres, N., Jennings, M. R., Covington, James A., 1973- and Mawby, P. A. (Philip A.). (2006) Field-effect mobility temperature modeling of 4H-SiC metal-oxide-semiconductor transistors. JOURNAL OF APPLIED PHYSICS, 100 (11). ISSN 0021-8979Full text not available from this repository.
Official URL: http://dx.doi.org/10.1063/1.2395597
Here a physically based channel mobility model has been developed to investigate the temperature dependence of the field-effect mobility of 4H-SiC metal-oxide-semiconductor (MOS) transistors with thermally oxidized gate insulators. This model has been designed so that it accounts for the high density of traps at the MOS interface. This temperature dependence is a key issue for silicon carbide electronics, as its basic material properties make it the foremost semiconductor for high power/high temperature electronic devices in applications such as spacecraft, aircraft, automobile, and energy distribution. Our modeling suggests that the high density of charged acceptor interface traps, encountered in thermally grown gate oxides, modulates the channel mobility due to the Coulomb scattering of free carriers in the inversion layer. When the temperature increases, the field-effect mobility of these devices also increases, due to an increase in inversion charge and a reduction of the trapped charge. Experimental data of the field-effect mobility temperature dependence are in good agreement with this model. (c) 2006 American Institute of Physics.
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||JOURNAL OF APPLIED PHYSICS|
|Publisher:||AMER INST PHYSICS|
|Date:||1 December 2006|
|Number of Pages:||6|
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