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Measurement and modelling of power electronic devices at cryogenic temperatures
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Forsyth, A. J., Yang, S. Y., Mawby, P. A. (Philip A.) and Igic, P. (2006) Measurement and modelling of power electronic devices at cryogenic temperatures. IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS, 153 (5). pp. 407-415. doi:10.1049/ip-cds:20050359 ISSN 1350-2409.
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Official URL: http://dx.doi.org/10.1049/ip-cds:20050359
Abstract
Practical results are used to parameterise a physically based, compact IGBT model for three generations of IGBT (PT, NPT and IGBT3), at temperatures extending down to 50 K. Full details are presented of the model parameter variations with temperature over the range 50-300 K. The models are then used to examine the performance of a sinusoidal pulse-width-modulated inverter leg at cryogenic temperatures.
Item Type: | Journal Article | ||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||
Journal or Publication Title: | IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS | ||||
Publisher: | INSTITUTION ENGINEERING TECHNOLOGY-IET | ||||
ISSN: | 1350-2409 | ||||
Official Date: | October 2006 | ||||
Dates: |
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Volume: | 153 | ||||
Number: | 5 | ||||
Number of Pages: | 9 | ||||
Page Range: | pp. 407-415 | ||||
DOI: | 10.1049/ip-cds:20050359 | ||||
Publication Status: | Published |
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