Transition from electron accumulation to depletion at InGaN surfaces
Veal, T. D. (Tim D.), Jefferson, P. H., Piper, L. F. J., McConville, C. F. (Chris F.), Joyce, T. B., Chalker, P. R., Considine, L., Lu, Hai and Schaff, W. J.. (2006) Transition from electron accumulation to depletion at InGaN surfaces. APPLIED PHYSICS LETTERS, 89 (20). ISSN 0003-6951Full text not available from this repository.
Official URL: http://dx.doi.org/10.1063/1.2387976
The composition dependence of the Fermi-level pinning at the oxidized (0001) surfaces of n-type InxGa1-xN films (0 <= x <= 1) is investigated using x-ray photoemission spectroscopy. The surface Fermi-level position varies from high above the conduction band minimum (CBM) at InN surfaces to significantly below the CBM at GaN surfaces, with the transition from electron accumulation to depletion occurring at approximately x=0.3. The results are consistent with the composition dependence of the band edges with respect to the charge neutrality level. (c) 2006 American Institute of Physics.
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||APPLIED PHYSICS LETTERS|
|Publisher:||AMER INST PHYSICS|
|Official Date:||13 November 2006|
|Number of Pages:||3|
Actions (login required)