Du, Bin, Hudgins, Jerry L., Santi, Enrico, Bryant, Angus T., Palmer, Patrick R. and Mantooth, H. Alan, 1963- . (2010) Transient electrothermal simulation of power semiconductor devices. IEEE Transactions on Power Electronics, Vol.25 (No.1). pp. 237-248. ISSN 0885-8993

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Abstract

In this paper, a new thermal model based on the Fourier series solution of heat conduction equation has been introduced in detail. 1-D and 2-D Fourier series thermal models have been programmed in MATLAB/Simulink. Compared with the traditional finite-difference thermal model and equivalent RC thermal network, the new thermal model can provide high simulation speed with high accuracy, which has been proved to be more favorable in dynamic thermal characterization on power semiconductor switches. The complete electrothermal simulation models of insulated gate bipolar transistor (IGBT) and power diodes under inductive load switching condition have been successfully implemented in MATLAB/Simulink. The experimental results on IGBT and power diodes with clamped inductive load switching tests have verified the new electrothermal simulation model. The advantage of Fourier series thermal model over widely used equivalent RC thermal network in dynamic thermal characterization has also been validated by the measured junction temperature.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QA Mathematics Q Science > QC Physics
Divisions:	Faculty of Science > Engineering
Library of Congress Subject Headings (LCSH):	Fourier series -- Computer programs, Heat -- Conduction -- Computer programs, Semiconductors -- Research, MATLAB/Simulink
Journal or Publication Title:	IEEE Transactions on Power Electronics
Publisher:	IEEE
ISSN:	0885-8993
Date:	January 2010
Volume:	Vol.25
Number:	No.1
Page Range:	pp. 237-248
Identification Number:	10.1109/TPEL.2009.2029105
Status:	Peer Reviewed
Access rights to Published version:	Open Access
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URI:	http://wrap.warwick.ac.uk/id/eprint/3284

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