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Characterisation of high-quality thick single-crystal diamond grown by CVD with a low nitrogen addition
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Tallaire, A., Collins, A. T., Charles, D., Achard, J., Sussmann, R., Gicquel, A., Newton, Mark E., Edmonds, A. M. and Cruddace, R. J. (2006) Characterisation of high-quality thick single-crystal diamond grown by CVD with a low nitrogen addition. DIAMOND AND RELATED MATERIALS, 15 (10). pp. 1700-1707. doi:10.1016/j.diamond.2006.02.005 ISSN 0925-9635.
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Official URL: http://dx.doi.org/10.1016/j.diamond.2006.02.005
Abstract
Single-crystal homoepitaxial diamond has been grown by chemical vapour deposition using a high-density microwave plasma. It has been shown that the growth rate can be increased by factors of up to 2.5 by adding small concentrations (2 to 10 ppm) of nitrogen to the gas phase. Freestanding specimens up to 1.7 mm thick have been characterised using optical absorption, cathodoluminescence, photoluminescence and Raman spectroscopies, and by electron paramagnetic resonance. These techniques all demonstrate that the colourless type IIa material is of excellent quality with total defect concentrations not exceeding 200 ppb, and is ideally suited for optical and electronic applications. (c) 2006 Elsevier B.V. All rights reserved.
Item Type: | Journal Article | ||||
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Subjects: | T Technology > TA Engineering (General). Civil engineering (General) | ||||
Journal or Publication Title: | DIAMOND AND RELATED MATERIALS | ||||
Publisher: | ELSEVIER SCIENCE SA | ||||
ISSN: | 0925-9635 | ||||
Official Date: | October 2006 | ||||
Dates: |
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Volume: | 15 | ||||
Number: | 10 | ||||
Number of Pages: | 8 | ||||
Page Range: | pp. 1700-1707 | ||||
DOI: | 10.1016/j.diamond.2006.02.005 | ||||
Publication Status: | Published |
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