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Mineralizing magnesium aluminate spinel formation with B2O3
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Bhattacharya, G., Zhang, S., Smith, Mark E., Jayaseelan, D. D. and Lee, W. E. (2006) Mineralizing magnesium aluminate spinel formation with B2O3. In: Unified International Technical Conference on Refractories, Orlando, FL, NOV 09, 2005. Published in: JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 89 (10). pp. 3034-3042. doi:10.1111/j.1551-2816.2006.01189.x ISSN 0002-7820.
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Official URL: http://dx.doi.org/10.1111/j.1551-2816.2006.01189.x
Abstract
B2O3 mineralizes spinel formation from stoichiometric (1:1 mole ratio) calcined magnesia and alumina. After 3 h at 1100 degrees C, X-ray diffraction (XRD) shows the mineralization effect of B2O3 is limited to 1.5 wt% additions with higher B2O3 contents leading to Mg3B2O6 formation and reduced spinel content. Boron nuclear magnetic resonance, electron probe microanalysis (EPMA), scanning electron microscopy, transmission electron microscopy (TEM) and XRD reveal formation of a boron-containing liquid. Energy dispersive spectroscopy in the TEM and EPMA of the glassy phases formed from solidification of the liquid reveal that initially it is Mg borate, later becoming a magnesia-modified boroaluminate, composition suggesting dissolution-precipitation as opposed to templated growth as the mechanism of this liquid phase mediated mineralization.
Item Type: | Conference Item (UNSPECIFIED) | ||||
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Subjects: | T Technology > TP Chemical technology | ||||
Journal or Publication Title: | JOURNAL OF THE AMERICAN CERAMIC SOCIETY | ||||
Publisher: | BLACKWELL PUBLISHING | ||||
ISSN: | 0002-7820 | ||||
Official Date: | October 2006 | ||||
Dates: |
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Volume: | 89 | ||||
Number: | 10 | ||||
Number of Pages: | 9 | ||||
Page Range: | pp. 3034-3042 | ||||
DOI: | 10.1111/j.1551-2816.2006.01189.x | ||||
Publication Status: | Published | ||||
Title of Event: | Unified International Technical Conference on Refractories | ||||
Location of Event: | Orlando, FL | ||||
Date(s) of Event: | NOV 09, 2005 |
Data sourced from Thomson Reuters' Web of Knowledge
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