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Application of ultra low energy (ULE) SIMS to emerging diamond technologies
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de la Mata, B. Guzman, Dowsett, M. G., Tajani, A and Schwitters, M. (2006) Application of ultra low energy (ULE) SIMS to emerging diamond technologies. In: 11th European Conference on Applications of Surface and Interface Anlaysis, Vienna, AUSTRIA, SEP 25-30, 2005. Published in: Surface and Interface Analysis, Volume 38 (Number 4). pp. 422-425. doi:10.1002/sia.2135 ISSN 0142-2421.
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Official URL: http://dx.doi.org/10.1002/sia.2135
Abstract
We report ultra low energy secondary ion mass spectrometry (ULE-SIMS) analysis of a single crystal boron delta-doped diamond layer with normal incidence O-2(+) beam at incident energies of 300 eV, 500 eV and 1 keV. The diamond layer was epitaxially grown using a chemical vapor deposition (CVD) method on a synthetic single crystal diamond substrate grown using a high-temperature, high-pressure technique. The good crystalline quality of the homoepitaxal boron delta-doped layer has allowed the study of the ULE-SIMS measurement process.
In contrast to the case of silicon, the transient effects on the sputter yield are very weak: we obtained a differential shift of 0.6 nm/keV - smaller than the depth measurement uncertainty (i.e. the initial erosion rate is marginally slower).
The boron ion yield is independent of the incident energy and the decay length is almost so (3.0, 3.1 and 3.5 nm for 300 eV, 500 eV and 1 keV respectively), reflecting a good depth resolution possibly limited by sample structure.
The erosion rate is energy independent over a wide range, but carbon ion yields are both energy and boron concentration dependent for high boron concentrations, proportional to (Y-B(+))(0.85). For this reason, care is needed with the boron quantification when the boron content is high. Copyright (C) 2006 John Wiley & Sons, Ltd.
Item Type: | Conference Item (Paper) | ||||||||||
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Subjects: | Q Science > QC Physics Q Science > QD Chemistry |
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||||||||
Journal or Publication Title: | Surface and Interface Analysis | ||||||||||
Publisher: | John Wiley & Sons Ltd. | ||||||||||
ISSN: | 0142-2421 | ||||||||||
Official Date: | 29 March 2006 | ||||||||||
Dates: |
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Volume: | Volume 38 | ||||||||||
Number: | Number 4 | ||||||||||
Number of Pages: | 4 | ||||||||||
Page Range: | pp. 422-425 | ||||||||||
DOI: | 10.1002/sia.2135 | ||||||||||
Status: | Peer Reviewed | ||||||||||
Publication Status: | Published | ||||||||||
Access rights to Published version: | Restricted or Subscription Access | ||||||||||
Conference Paper Type: | Paper | ||||||||||
Title of Event: | 11th European Conference on Applications of Surface and Interface Anlaysis | ||||||||||
Type of Event: | Conference | ||||||||||
Location of Event: | Vienna, AUSTRIA | ||||||||||
Date(s) of Event: | SEP 25-30, 2005 |
Data sourced from Thomson Reuters' Web of Knowledge
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