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Tunable temperature-induced magnetization jump in a GdVO3 single crystal

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UNSPECIFIED (2006) Tunable temperature-induced magnetization jump in a GdVO3 single crystal. PHYSICAL REVIEW B, 73 (2). -. doi:10.1103/PhysRevB.73.024428 ISSN 1098-0121.

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Official URL: http://dx.doi.org/10.1103/PhysRevB.73.024428

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Abstract

We report on a feature of the temperature-induced magnetization jump observed along the a axis of the GdVO3 single crystal at temperature T-M approximate to 8 K. Below T-M, the compound shows no coercivity and remanent magnetization indicating a homogenous antiferromagnetic structure. However, we will demonstrate that the magnetic state below T-M is indeed history dependent and it shows up in different jumps in the magnetization only when warming the sample through T-M. Such a magnetic memory effect is highly unusual, suggesting different domain arrangements in the supposedly homogenous antiferromagnetic phase of the compound.

Item Type: Journal Article
Subjects: Q Science > QC Physics
Journal or Publication Title: PHYSICAL REVIEW B
Publisher: AMERICAN PHYSICAL SOC
ISSN: 1098-0121
Official Date: January 2006
Dates:
DateEvent
January 2006UNSPECIFIED
Volume: 73
Number: 2
Number of Pages: 6
Page Range: -
DOI: 10.1103/PhysRevB.73.024428
Publication Status: Published

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