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Electron accumulation at InN/AlN and InN/GaN interfaces
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UNSPECIFIED (2005) Electron accumulation at InN/AlN and InN/GaN interfaces. In: International Workshop on Nitrides Semiconductors (IWN 2004), Pittsburgh, PA, JUL 19-23, 2004. Published in: Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7, 2 (7). pp. 2246-2249. ISBN *************. doi:10.1002/pssc.200461418 ISSN 1610-1634.
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Official URL: http://dx.doi.org/10.1002/pssc.200461418
Abstract
The electron accumulation at InN/AlN and InN/GaN interfaces is investigated in InN epilayers grown by molecular beam epitaxy. Hall measurements as a function of InN film thickness are used to determine the excess sheet density that results from both surface and interface charge accumulation. Using high-resolution electron-energy-loss spectroscopy (HREELS), the surface sheet density is found to be the same for InN films grown on both AlN and GaN buffer layers. The combination of the Hall and HREELS results indicates that the sheet density associated with the charge accumulation at the InN/buffer layer interface is significantly higher for AlN buffers (1.9 x 10(13) cm(-2)) than for GaN buffers (< 0.5 x 10(13) cm(-2)). This buffer layer-dependence of the interface accumulation is discussed in terms of lattice mismatch and the effect of mixed polarity on the spontaneous polarization. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Item Type: | Conference Item (UNSPECIFIED) | ||||
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Subjects: | Q Science > QC Physics | ||||
Series Name: | PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS | ||||
Journal or Publication Title: | Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7 | ||||
Publisher: | WILEY-V C H VERLAG GMBH | ||||
ISBN: | ************* | ||||
ISSN: | 1610-1634 | ||||
Editor: | Stutzmann, M | ||||
Official Date: | 2005 | ||||
Dates: |
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Volume: | 2 | ||||
Number: | 7 | ||||
Number of Pages: | 4 | ||||
Page Range: | pp. 2246-2249 | ||||
DOI: | 10.1002/pssc.200461418 | ||||
Publication Status: | Published | ||||
Title of Event: | International Workshop on Nitrides Semiconductors (IWN 2004) | ||||
Location of Event: | Pittsburgh, PA | ||||
Date(s) of Event: | JUL 19-23, 2004 |
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