UNSPECIFIED (2004) Hooge mobility fluctuations in n-InSb magnetoresistors as a reference for access resistance LF-noise measurements of SiGe metamorphic HMOS FETs. In: NATO Advanced Research Workshop on Advanced Experimental Methods for Noise Research in Nanoscale Electronic Devices, Brno, CZECH REPUBLIC, AUG 14-16, 2003. Published in: ADVANCED EXPERIMENTAL METHODS FOR NOISE RESEARCH IN NANOSCALE ELECTRONIC DEVICES, 151 pp. 311-318.

Abstract

For the first time, to verify the origin of LF-noise (LFN) in the access resistance of metamorphic SiGe HMOS FETs, we used a thin film n-InSb magnetoresistor (MR) as a reference control. Hybrid MRs were fabricated on NiOxFe(2)O(3) ferrite substrates from Sn-doped MBE-grown n-InSb/i-GaAs heterostructures. The thickness of the InSb epilayers lie in the range 1.0-2.0 gm giving a room-temperature Hall mobilities of mu = 5.5x10(4) cm(2)/Vs at a carrier densities of 5x10(16) cm(-3). The device resistance could be changed by up to 500% in a magnetic field of B = 325 mT. LFN spectra were measured at B = 0 and 3 1 mT. Results show that the current dependence of the PSD for this MR is described by the Hooge mobility fluctuation model, according to S-t/I-2 = S-R/R-2 = alpha(H)xmu (eR/fL(2)). A simple design for a calibrated noise reference is proposed.

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