The Library
Hooge mobility fluctuations in n-InSb magnetoresistors as a reference for access resistance LF-noise measurements of SiGe metamorphic HMOS FETs
Tools
UNSPECIFIED (2004) Hooge mobility fluctuations in n-InSb magnetoresistors as a reference for access resistance LF-noise measurements of SiGe metamorphic HMOS FETs. In: NATO Advanced Research Workshop on Advanced Experimental Methods for Noise Research in Nanoscale Electronic Devices, Brno, CZECH REPUBLIC, AUG 14-16, 2003. Published in: ADVANCED EXPERIMENTAL METHODS FOR NOISE RESEARCH IN NANOSCALE ELECTRONIC DEVICES, 151 pp. 311-318. ISBN 1-4020-2168-2.
Research output not available from this repository.
Request-a-Copy directly from author or use local Library Get it For Me service.
Abstract
For the first time, to verify the origin of LF-noise (LFN) in the access resistance of metamorphic SiGe HMOS FETs, we used a thin film n-InSb magnetoresistor (MR) as a reference control. Hybrid MRs were fabricated on NiOxFe(2)O(3) ferrite substrates from Sn-doped MBE-grown n-InSb/i-GaAs heterostructures. The thickness of the InSb epilayers lie in the range 1.0-2.0 gm giving a room-temperature Hall mobilities of mu = 5.5x10(4) cm(2)/Vs at a carrier densities of 5x10(16) cm(-3). The device resistance could be changed by up to 500% in a magnetic field of B = 325 mT. LFN spectra were measured at B = 0 and 3 1 mT. Results show that the current dependence of the PSD for this MR is described by the Hooge mobility fluctuation model, according to S-t/I-2 = S-R/R-2 = alpha(H)xmu (eR/fL(2)). A simple design for a calibrated noise reference is proposed.
Item Type: | Conference Item (UNSPECIFIED) | ||||
---|---|---|---|---|---|
Subjects: | Q Science > QD Chemistry Q Science > QA Mathematics Q Science > QC Physics |
||||
Series Name: | NATO SCIENCE SERIES, SERIES II: MATHEMATICS, PHYSICS AND CHEMISTRY | ||||
Journal or Publication Title: | ADVANCED EXPERIMENTAL METHODS FOR NOISE RESEARCH IN NANOSCALE ELECTRONIC DEVICES | ||||
Publisher: | SPRINGER | ||||
ISBN: | 1-4020-2168-2 | ||||
Editor: | Sikula, J and Levinshtein, M | ||||
Official Date: | 2004 | ||||
Dates: |
|
||||
Volume: | 151 | ||||
Number of Pages: | 8 | ||||
Page Range: | pp. 311-318 | ||||
Publication Status: | Published | ||||
Title of Event: | NATO Advanced Research Workshop on Advanced Experimental Methods for Noise Research in Nanoscale Electronic Devices | ||||
Location of Event: | Brno, CZECH REPUBLIC | ||||
Date(s) of Event: | AUG 14-16, 2003 |
Data sourced from Thomson Reuters' Web of Knowledge
Request changes or add full text files to a record
Repository staff actions (login required)
View Item |