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Hooge mobility fluctuations in n-InSb magnetoresistors as a reference for access resistance LF-noise measurements of SiGe metamorphic HMOS FETs
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UNSPECIFIED (2004) Hooge mobility fluctuations in n-InSb magnetoresistors as a reference for access resistance LF-noise measurements of SiGe metamorphic HMOS FETs. In: NATO Advanced Research Workshop on Advanced Experimental Methods for Noise Research in Nanoscale Electronic Devices, AUG 14-16, 2003, Brno, CZECH REPUBLIC.
Full text not available from this repository.Abstract
For the first time, to verify the origin of LF-noise (LFN) in the access resistance of metamorphic SiGe HMOS FETs, we used a thin film n-InSb magnetoresistor (MR) as a reference control. Hybrid MRs were fabricated on NiOxFe(2)O(3) ferrite substrates from Sn-doped MBE-grown n-InSb/i-GaAs heterostructures. The thickness of the InSb epilayers lie in the range 1.0-2.0 gm giving a room-temperature Hall mobilities of mu = 5.5x10(4) cm(2)/Vs at a carrier densities of 5x10(16) cm(-3). The device resistance could be changed by up to 500% in a magnetic field of B = 325 mT. LFN spectra were measured at B = 0 and 3 1 mT. Results show that the current dependence of the PSD for this MR is described by the Hooge mobility fluctuation model, according to S-t/I-2 = S-R/R-2 = alpha(H)xmu (eR/fL(2)). A simple design for a calibrated noise reference is proposed.
| Item Type: | Conference Item (UNSPECIFIED) |
|---|---|
| Subjects: | Q Science > QD Chemistry Q Science > QA Mathematics Q Science > QC Physics |
| Series Name: | NATO SCIENCE SERIES, SERIES II: MATHEMATICS, PHYSICS AND CHEMISTRY |
| Journal or Publication Title: | ADVANCED EXPERIMENTAL METHODS FOR NOISE RESEARCH IN NANOSCALE ELECTRONIC DEVICES |
| Publisher: | SPRINGER |
| ISBN: | 1-4020-2168-2 |
| Editor: | Sikula, J and Levinshtein, M |
| Date: | 2004 |
| Volume: | 151 |
| Number of Pages: | 8 |
| Page Range: | pp. 311-318 |
| Publication Status: | Published |
| Title of Event: | NATO Advanced Research Workshop on Advanced Experimental Methods for Noise Research in Nanoscale Electronic Devices |
| Location of Event: | Brno, CZECH REPUBLIC |
| Date(s) of Event: | AUG 14-16, 2003 |
| URI: | http://wrap.warwick.ac.uk/id/eprint/34139 |
Data sourced from Thomson Reuters' Web of Knowledge
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