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Hooge mobility fluctuations in n-InSb magnetoresistors as a reference for access resistance LF-noise measurements of SiGe metamorphic HMOS FETs

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UNSPECIFIED (2004) Hooge mobility fluctuations in n-InSb magnetoresistors as a reference for access resistance LF-noise measurements of SiGe metamorphic HMOS FETs. In: NATO Advanced Research Workshop on Advanced Experimental Methods for Noise Research in Nanoscale Electronic Devices, Brno, CZECH REPUBLIC, AUG 14-16, 2003. Published in: ADVANCED EXPERIMENTAL METHODS FOR NOISE RESEARCH IN NANOSCALE ELECTRONIC DEVICES, 151 pp. 311-318. ISBN 1-4020-2168-2.

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Abstract

For the first time, to verify the origin of LF-noise (LFN) in the access resistance of metamorphic SiGe HMOS FETs, we used a thin film n-InSb magnetoresistor (MR) as a reference control. Hybrid MRs were fabricated on NiOxFe(2)O(3) ferrite substrates from Sn-doped MBE-grown n-InSb/i-GaAs heterostructures. The thickness of the InSb epilayers lie in the range 1.0-2.0 gm giving a room-temperature Hall mobilities of mu = 5.5x10(4) cm(2)/Vs at a carrier densities of 5x10(16) cm(-3). The device resistance could be changed by up to 500% in a magnetic field of B = 325 mT. LFN spectra were measured at B = 0 and 3 1 mT. Results show that the current dependence of the PSD for this MR is described by the Hooge mobility fluctuation model, according to S-t/I-2 = S-R/R-2 = alpha(H)xmu (eR/fL(2)). A simple design for a calibrated noise reference is proposed.

Item Type: Conference Item (UNSPECIFIED)
Subjects: Q Science > QD Chemistry
Q Science > QA Mathematics
Q Science > QC Physics
Series Name: NATO SCIENCE SERIES, SERIES II: MATHEMATICS, PHYSICS AND CHEMISTRY
Journal or Publication Title: ADVANCED EXPERIMENTAL METHODS FOR NOISE RESEARCH IN NANOSCALE ELECTRONIC DEVICES
Publisher: SPRINGER
ISBN: 1-4020-2168-2
Editor: Sikula, J and Levinshtein, M
Official Date: 2004
Dates:
DateEvent
2004UNSPECIFIED
Volume: 151
Number of Pages: 8
Page Range: pp. 311-318
Publication Status: Published
Title of Event: NATO Advanced Research Workshop on Advanced Experimental Methods for Noise Research in Nanoscale Electronic Devices
Location of Event: Brno, CZECH REPUBLIC
Date(s) of Event: AUG 14-16, 2003

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