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Hooge mobility fluctuations in n-InSb magnetoresistors as a reference for access resistance LF-noise measurements of SiGe metamorphic HMOS FETs
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UNSPECIFIED (2004) Hooge mobility fluctuations in n-InSb magnetoresistors as a reference for access resistance LF-noise measurements of SiGe metamorphic HMOS FETs. In: NATO Advanced Research Workshop on Advanced Experimental Methods for Noise Research in Nanoscale Electronic Devices, Brno, CZECH REPUBLIC, AUG 14-16, 2003. Published in: ADVANCED EXPERIMENTAL METHODS FOR NOISE RESEARCH IN NANOSCALE ELECTRONIC DEVICES, 151 pp. 311-318. ISBN 1-4020-2168-2.
Full text not available from this repository, contact author.Abstract
For the first time, to verify the origin of LF-noise (LFN) in the access resistance of metamorphic SiGe HMOS FETs, we used a thin film n-InSb magnetoresistor (MR) as a reference control. Hybrid MRs were fabricated on NiOxFe(2)O(3) ferrite substrates from Sn-doped MBE-grown n-InSb/i-GaAs heterostructures. The thickness of the InSb epilayers lie in the range 1.0-2.0 gm giving a room-temperature Hall mobilities of mu = 5.5x10(4) cm(2)/Vs at a carrier densities of 5x10(16) cm(-3). The device resistance could be changed by up to 500% in a magnetic field of B = 325 mT. LFN spectra were measured at B = 0 and 3 1 mT. Results show that the current dependence of the PSD for this MR is described by the Hooge mobility fluctuation model, according to S-t/I-2 = S-R/R-2 = alpha(H)xmu (eR/fL(2)). A simple design for a calibrated noise reference is proposed.
| Item Type: | Conference Item (UNSPECIFIED) | ||||
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| Subjects: | Q Science > QD Chemistry Q Science > QA Mathematics Q Science > QC Physics |
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| Series Name: | NATO SCIENCE SERIES, SERIES II: MATHEMATICS, PHYSICS AND CHEMISTRY | ||||
| Journal or Publication Title: | ADVANCED EXPERIMENTAL METHODS FOR NOISE RESEARCH IN NANOSCALE ELECTRONIC DEVICES | ||||
| Publisher: | SPRINGER | ||||
| ISBN: | 1-4020-2168-2 | ||||
| Editor: | Sikula, J and Levinshtein, M | ||||
| Official Date: | 2004 | ||||
| Dates: |
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| Volume: | 151 | ||||
| Number of Pages: | 8 | ||||
| Page Range: | pp. 311-318 | ||||
| Publication Status: | Published | ||||
| Title of Event: | NATO Advanced Research Workshop on Advanced Experimental Methods for Noise Research in Nanoscale Electronic Devices | ||||
| Location of Event: | Brno, CZECH REPUBLIC | ||||
| Date(s) of Event: | AUG 14-16, 2003 |
Data sourced from Thomson Reuters' Web of Knowledge
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