Optimised preamplifier for LF-noise MOSFET characterization
UNSPECIFIED (2004) Optimised preamplifier for LF-noise MOSFET characterization. In: NATO Advanced Research Workshop on Advanced Experimental Methods for Noise Research in Nanoscale Electronic Devices, AUG 14-16, 2003, Brno, CZECH REPUBLIC.Full text not available from this repository.
A modular design of preamplifier for low frequency noise measurements with interchangeable first stage was chosen to improve reliability and to reduce the influence of connection cables on measurement results. In this communication we present the optimised preamplifier modules as the first stages for MOSFETs gate leakage and drain current noise measurements with input impedance 50 Omega - 108 Omega in the frequency range 1.0 Hz - 10(5) Hz. The best available commercial operational amplifiers (OPA's) AD549, OPA637 and LT1028A were used for the first stage module at each of the three chosen impedance ranges. The noise characteristics of different OPA's, which have been tested, are also presented.
|Item Type:||Conference Item (UNSPECIFIED)|
|Subjects:||Q Science > QD Chemistry
Q Science > QA Mathematics
Q Science > QC Physics
|Series Name:||NATO SCIENCE SERIES, SERIES II: MATHEMATICS, PHYSICS AND CHEMISTRY|
|Journal or Publication Title:||ADVANCED EXPERIMENTAL METHODS FOR NOISE RESEARCH IN NANOSCALE ELECTRONIC DEVICES|
|Editor:||Sikula, J and Levinshtein, M|
|Number of Pages:||8|
|Page Range:||pp. 319-326|
|Title of Event:||NATO Advanced Research Workshop on Advanced Experimental Methods for Noise Research in Nanoscale Electronic Devices|
|Location of Event:||Brno, CZECH REPUBLIC|
|Date(s) of Event:||AUG 14-16, 2003|
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