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XRD analysis of strained Ge-SiGe heterostructures on relaxed SiGe graded buffers grown by hybrid epitaxy on Si(001) substrates
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UNSPECIFIED (2005) XRD analysis of strained Ge-SiGe heterostructures on relaxed SiGe graded buffers grown by hybrid epitaxy on Si(001) substrates. In: Symposium on Materials Science and Device Issues for Futrue Si-Based Technologies held at the 2005 EMRS Meeting, Strasbourg, FRANCE, MAY 31-JUN 03, 2005. Published in: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 124 (Sp. Iss. SI). pp. 123-126. doi:10.1016/j.mseb.2005.08.087 ISSN 0921-5107.
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Official URL: http://dx.doi.org/10.1016/j.mseb.2005.08.087
Abstract
Ge/Si1-xGex inverted modulation doped heterostructures with Ge channel thickness of 16 and 20 nm were grown by a method of hybrid epitaxy followed by ex situ annealing at 650 degrees C for p-HMOS application. The thicker layers of the virtual substrate (6000 nm graded SiGe up to x = 0.6 and 1000 nm uniform composition with x = 0.6) were produced by ultrahigh vacuum chemical vapor deposition (UHV-CVD) while the thinner, Si(2nm)-SiGe(20nm)-Ge-SiGe(15nm+5nm B-doped+20nm) active layers were grown by low temperature solid-source (LT-SS) MBE at T=350 degrees C. As-grown and annealed samples were measured by X-ray diffraction (XRD). Reciprocal space maps (RSMs) allowed us to determine non-destructively the precise composition (similar to 1%) and strain of the Ge channel, along with similar information regarding the other layers that made up the whole structure. Layer thickness was determined with complementary high-resolution Rutherford backscattering (RBS) experiments. (c) 2005 Elsevier B.V. All rights reserved.
Item Type: | Conference Item (UNSPECIFIED) | ||||
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Subjects: | T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics |
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Journal or Publication Title: | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | ||||
Publisher: | ELSEVIER SCIENCE SA | ||||
ISSN: | 0921-5107 | ||||
Official Date: | 5 December 2005 | ||||
Dates: |
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Volume: | 124 | ||||
Number: | Sp. Iss. SI | ||||
Number of Pages: | 4 | ||||
Page Range: | pp. 123-126 | ||||
DOI: | 10.1016/j.mseb.2005.08.087 | ||||
Publication Status: | Published | ||||
Title of Event: | Symposium on Materials Science and Device Issues for Futrue Si-Based Technologies held at the 2005 EMRS Meeting | ||||
Location of Event: | Strasbourg, FRANCE | ||||
Date(s) of Event: | MAY 31-JUN 03, 2005 |
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