The Library
Non-destructive thickness characterization of Si based heterostructure by X-ray diffraction and reflectivity
Tools
Tools
Tools
Liu, Xue-Chao, Myronov, Maksym, Dobbie, A. (Andrew), Nguyen, Van H. and Leadley, D. R. (David R.) (2011) Non-destructive thickness characterization of Si based heterostructure by X-ray diffraction and reflectivity. Solid-State Electronics, Vol.60 (No.1). pp. 42-45. doi:10.1016/j.sse.2011.01.036 ISSN 0038-1101.
Research output not available from this repository.
Request-a-Copy directly from author or use local Library Get it For Me service.
Official URL: http://dx.doi.org/10.1016/j.sse.2011.01.036
Abstract
High-resolution X-ray diffraction rocking curve (RC) and X-ray reflectivity (XRR) were used to characterize the Si based heterostructures grown by reduced pressure chemical vapour deposition. The investigation focused on the reliability and accuracy of thickness measurement by the different techniques. For smooth Si epilayers grown on a thin (20 nm) strained Si0.9Ge0.1 buffer, it is found that both XRR and RC produce reliable values that agree well with transmission electron microscope (TEM) results over a wide range. The best-fit thickness from both XRR and RC is within +/- 5% of the TEM measurement, with XRR producing more accurate values than RC. However, the agreement is not good for Si epilayer grown on a thick (2 mu m) relaxed Si07Ge0.3 virtual substrate due to the presence of rough surface. (C) 2011 Elsevier Ltd. All rights reserved.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Subjects: | Q Science > QC Physics | ||||
| Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
| Journal or Publication Title: | Solid-State Electronics | ||||
| Publisher: | Elsevier | ||||
| ISSN: | 0038-1101 | ||||
| Official Date: | June 2011 | ||||
| Dates: |
|
||||
| Volume: | Vol.60 | ||||
| Number: | No.1 | ||||
| Page Range: | pp. 42-45 | ||||
| DOI: | 10.1016/j.sse.2011.01.036 | ||||
| Status: | Peer Reviewed | ||||
| Reuse Statement (publisher, data, author rights): | International SiGe Technology and Device Meeting (ISTDM), Kista, SWEDEN, MAY 24-26, 2010 | ||||
| Access rights to Published version: | Restricted or Subscription Access | ||||
| Funder: | Engineering and Physical Sciences Research Council (EPSRC) | ||||
| Grant number: | EP/E065317/1 (EPSRC), EP/F031408/1 (EPSRC) |
Request changes or add full text files to a record
Repository staff actions (login required)
 |
View Item |
