Alatise, Olayiwola M., Olsen, Sarah H., Cowern, Nicholas E. B., O'Neill, Anthony G. and Majhi, Prashant (2009) Performance enhancements in scaled strained-SiGe pMOSFETs with HfSiOx/TiSiN gate stacks. IEEE Transactions on Electron Devices, Vol.56 (No.10). pp. 2277-2284. doi:10.1109/TED.2009.2028375

Preview

PDF WRAP_Alatise_1070562-es-091211-ieee_ted_performance_enhancements_strained_sige_pmosfets.pdf - Accepted Version - Requires a PDF viewer. Download (479Kb)

Request Changes to record.

Abstract

The short-channel performance of compressively strained Si0.77Ge0.23 pMOSFETs with HfSiOx/TiSiN gate stacks has been characterized alongside that of unstrained-Si pMOSFETs. Strained-SiGe devices exhibit 80% mobility enhancement compared with Si control devices at an effective vertical field of 1 MV middotcm-1. For the first time, the on-state drain-current enhancement of intrinsic strained-SiGe devices is shown to be approximately constant with scaling. Intrinsic strained-SiGe devices with 100-nm gate lengths exhibit 75% enhancement in maximum transconductance compared with Si control devices, using only ~20% Ge (~0.8% strain). The origin of the loss in performance enhancement commonly observed in strained-SiGe devices at short gate lengths is examined and found to be dominated by reduced boron diffusivity and increased parasitic series resistance in compressively strained SiGe devices compared with silicon control devices. The effective channel length was extracted from I- V measurements and was found to be 40% smaller in 100-nm silicon control devices than in SiGe devices having the same lithographic gate lengths, which is in good agreement with the metallurgical channel length predicted by TCAD process simulations. Self-heating due to the low thermal conductivity of SiGe is shown to have a negligible effect on the scaled-device performance. These findings demonstrate that the significant on-state performance gains of strained-SiGe pMOSFETs compared with bulk Si devices observed at long channel lengths are also obtainable in scaled devices if dopant diffusion, silicidation, and contact modules can be optimized for SiGe.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:	Faculty of Science > Engineering
Library of Congress Subject Headings (LCSH):	Electron mobility, Silicon alloys, Metal oxide semiconductors, Complementary, Metal oxide semiconductor field-effect transistors
Journal or Publication Title:	IEEE Transactions on Electron Devices
Publisher:	IEEE
ISSN:	0018-9383
Official Date:	2009
Dates:	Date Event 2009 Published
Date of first compliant deposit:	17 December 2015
Volume:	Vol.56
Number:	No.10
Number of Pages:	8
Page Range:	pp. 2277-2284
DOI:	10.1109/TED.2009.2028375
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access
Funder:	Engineering and Physical Sciences Research Council (EPSRC), SEMATECH (Organization)

Request changes or add full text files to a record

Repository staff actions (login required)

View Item

Downloads