Alatise, Olayiwola M., Olsen, Sarah H., O'Neill, Anthony G. and Majhi, Prashant. (2010) Improved self-gain in deep submicrometer strained silicon-germanium pMOSFETs with HfSiOx/TiSiN gate stacks. Microelectronic Engineering, Vol.87 (No.11). pp. 2196-2199. ISSN 0167-9317

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Abstract

The self-gain of surface channel compressively strained SiGe pMOSFETs with HfSiOx/TiSiN gate stacks is investigated for a range of gate lengths down to 55 nm. There is 125% and 700% enhancement in the self-gain of SiGe pMOSFETs compared with the Si control at 100 nm and 55 nm lithographic gate lengths, respectively. This improvement in the self-gain of the SiGe devices is due to 80% hole mobility enhancement compared with the Si control and improved electrostatic integrity in the SiGe devices due to less boron diffusion into the channel. At 55 nm gate length, the SiGe pMOSFETs show 50% less drain induced barrier lowering compared with the Si control devices. Electrical measurements show that the SiGe devices have larger effective channel lengths. It is shown that the enhancement in the self-gain of the SiGe devices compared with the Si control increases as the gate length is reduced thereby making SiGe pMOSFETs with HfSiOx/TiSiN gate stacks an excellent candidate for analog/mixed-signal applications.

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Item Type:	Journal Article
Subjects:	Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:	Faculty of Science > Engineering
Library of Congress Subject Headings (LCSH):	Metal oxide semiconductor field-effect transistors, Silicon alloys
Journal or Publication Title:	Microelectronic Engineering
Publisher:	Elsevier BV
ISSN:	0167-9317
Date:	2010
Volume:	Vol.87
Number:	No.11
Number of Pages:	4
Page Range:	pp. 2196-2199
Identification Number:	10.1016/j.mee.2010.02.002
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access
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URI:	http://wrap.warwick.ac.uk/id/eprint/37112

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