Alatise, Olayiwola M., Kwa, Kelvin S. K., Olsen, Sarah H. and O'Neill, Anthony G. (2010) The impact of self-heating and SiGe strain-relaxed buffer thickness on the analog performance of strained Si nMOSFETs. Solid-State Electronics, Vol.54 (No.3). pp. 327-335. doi:10.1016/j.sse.2009.09.029 ISSN 0038-1101.

Preview

PDF WRAP_Alatise_1070562-es-091211-solid_state_electronics_self_heating_strained_si_mosfets.pdf - Accepted Version - Requires a PDF viewer. Download (638Kb)

Request Changes to record.

Abstract

The impact of the thickness of the silicon–germanium strain-relaxed buffer (SiGe SRB) on the analog performance of strained Si nMOSFETs is investigated. The negative drain conductance caused by self-heating at high power levels leads to negative self-gain which can cause anomalous circuit behavior like non-linear phase shifts. Using AC and DC measurements, it is shown that reducing the SRB thickness improves the analog design space and performance by minimizing self-heating. The range of terminal voltages that leverage positive self-gain in 0.1 μm strained Si MOSFETs fabricated on 425 nm SiGe SRBs is increased by over 100% compared with strained Si devices fabricated on conventional SiGe SRBs 4 μm thick. Strained Si nMOSFETs fabricated on thin SiGe SRBs also show 45% improvement in the self-gain compared with the Si control as well as 25% enhancement in the on-state performance compared with the strained Si nMOSFETs on the 4 μm SiGe SRB. The extracted thermal resistance is 50% lower in the strained Si device on the thin SiGe SRB corresponding to a 30% reduction in the temperature rise compared with the device fabricated on the 4 μm SiGe SRB. Comparisons between the maximum drain voltages for positive self-gain in the strained Si devices and the ITRS projections of supply-voltage scaling show that reducing the thickness of the SiGe SRB would be necessary for future technology nodes.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:	Faculty of Science, Engineering and Medicine > Engineering > Engineering
Library of Congress Subject Headings (LCSH):	Metal oxide semiconductor field-effect transistors, Silicon alloys, Silicon, Electron mobility
Journal or Publication Title:	Solid-State Electronics
Publisher:	Pergamon
ISSN:	0038-1101
Official Date:	2010
Dates:	Date Event 2010 Published
Volume:	Vol.54
Number:	No.3
Page Range:	pp. 327-335
DOI:	10.1016/j.sse.2009.09.029
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access
Date of first compliant deposit:	17 December 2015
Date of first compliant Open Access:	17 December 2015
Funder:	Seventh Framework Programme (European Commission) (FP7), Sixth Framework Programme (European Commission) (FP6), Engineering and Physical Sciences Research Council (EPSRC)

Request changes or add full text files to a record

Repository staff actions (login required)

View Item

Downloads